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X-ray truncation rods analysis of Cu thin films on C-plane sapphire
Chung K.S.; Hong Hawoong; Aburano R.D.; Roesler J.M.; Chiang T.C.; Chen Haydn
1996-12-01
Source PublicationMaterials Research Society Symposium Proceedings
Volume437Pages:21-26
AbstractThe interfacial structure of room-temperature MBE-grown Cu thin film on c-plane sapphire has been studied by measuring the substrate crystal truncation rod (CTR) using synchrotron-radiation. One substrate was annealed in air at 1500 °C for 3 hours followed by an anneal in UHV at 1200 °C for 30 minutes prior to Cu deposition. CTR from a clean sapphire substrate without Cu coverage was measured as a reference. The annealed substrate showed higher diffracted intensity along the CTR due to changes in surface structure. The terminating sequence of the substrate surface layers have been obtained from intensity profile analysis.
URLView the original
Language英語English
Fulltext Access
Document TypeJournal article
CollectionUniversity of Macau
AffiliationUniversity of Illinois at Urbana-Champaign
Recommended Citation
GB/T 7714
Chung K.S.,Hong Hawoong,Aburano R.D.,et al. X-ray truncation rods analysis of Cu thin films on C-plane sapphire[J]. Materials Research Society Symposium Proceedings, 1996, 437, 21-26.
APA Chung K.S.., Hong Hawoong., Aburano R.D.., Roesler J.M.., Chiang T.C.., & Chen Haydn (1996). X-ray truncation rods analysis of Cu thin films on C-plane sapphire. Materials Research Society Symposium Proceedings, 437, 21-26.
MLA Chung K.S.,et al."X-ray truncation rods analysis of Cu thin films on C-plane sapphire".Materials Research Society Symposium Proceedings 437(1996):21-26.
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