Residential College | false |
Status | 已發表Published |
C 60 encapsulation of the Si(111)-(7×7) surface | |
Hong H.2; McMahon W.E.2; Zschack P.1; Lin D.-S.2; Aburano R.D.2; Chen H.2; Chiang T.-C.2 | |
1992-12-01 | |
Source Publication | Applied Physics Letters |
ISSN | 00036951 |
Volume | 61Issue:26Pages:3127-3129 |
Abstract | The structure of a Si(111)-(7×7) surface capped by a 200 Å film of C was studied by grazing-incidence x-ray diffraction. The Si(111)-(7×7) reconstruction prepared in vacuum, including the loosely bonded "adatoms" on the surface, is preserved under the C overlayer. This result illustrates that C can be used as an inert cap for surfaces and suggests potentially interesting applications in surface science research and electronic device engineering. |
DOI | 10.1063/1.107982 |
URL | View the original |
Language | 英語English |
WOS ID | WOS:A1992KD92400018 |
Scopus ID | 2-s2.0-0007529285 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | University of Macau |
Affiliation | 1.Oak Ridge National Laboratory 2.University of Illinois at Urbana-Champaign |
Recommended Citation GB/T 7714 | Hong H.,McMahon W.E.,Zschack P.,et al. C 60 encapsulation of the Si(111)-(7×7) surface[J]. Applied Physics Letters, 1992, 61(26), 3127-3129. |
APA | Hong H.., McMahon W.E.., Zschack P.., Lin D.-S.., Aburano R.D.., Chen H.., & Chiang T.-C. (1992). C 60 encapsulation of the Si(111)-(7×7) surface. Applied Physics Letters, 61(26), 3127-3129. |
MLA | Hong H.,et al."C 60 encapsulation of the Si(111)-(7×7) surface".Applied Physics Letters 61.26(1992):3127-3129. |
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