Residential College | false |
Status | 已發表Published |
A comparative study of digital low dropout regulators | |
Huang,Mo1; Lu,Yan1; Martins,Rui P.1,2 | |
2020-11 | |
Source Publication | Journal of Semiconductors |
ISSN | 1674-4926 |
Volume | 41Issue:11Pages:111405 |
Abstract | Granular power management in a power-efficient system on a chip (SoC) requires multiple integrated voltage regulators with a small area, process scalability, and low supply voltage. Conventional on-chip analog low-dropout regulators (ALDOs) can hardly meet these requirements, while digital LDOs (DLDOs) are good alternatives. However, the conventional DLDO, with synchronous control, has inherently slow transient response limited by the power-speed trade-off. Meanwhile, it has a poor power supply rejection (PSR), because the fully turned-on power switches in DLDO are vulnerable to power supply ripples. In this comparative study on DLDOs, first, we compare the pros and cons between ALDO and DLDO in general. Then, we summarize the recent DLDO advanced techniques for fast transient response and PSR enhancement. Finally, we discuss the design trends and possible directions of DLDO. |
Keyword | Digital Control Fast Transient Response Integrated Voltage Regulator Low Dropout Regulator (Ldo) Power Supply Rejection (Psr) |
DOI | 10.1088/1674-4926/41/11/111405 |
URL | View the original |
Indexed By | ESCI |
Language | 英語English |
WOS Research Area | Physics |
WOS Subject | Physics, Condensed Matter |
WOS ID | WOS:000587059400001 |
Scopus ID | 2-s2.0-85096311776 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF MICROELECTRONICS DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING |
Corresponding Author | Huang,Mo |
Affiliation | 1.State Key Laboratory of Analog and Mixed-Signal Vlsi,Institute of Microelectronics,DECE/FST,University of Macau,Macao 2.Instituto Superior Técnico,Universidade de Lisboa,Lisbon,1049-001,Portugal |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Huang,Mo,Lu,Yan,Martins,Rui P.. A comparative study of digital low dropout regulators[J]. Journal of Semiconductors, 2020, 41(11), 111405. |
APA | Huang,Mo., Lu,Yan., & Martins,Rui P. (2020). A comparative study of digital low dropout regulators. Journal of Semiconductors, 41(11), 111405. |
MLA | Huang,Mo,et al."A comparative study of digital low dropout regulators".Journal of Semiconductors 41.11(2020):111405. |
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