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Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions | |
Yangfan Shao1,2; Qian Wang1; Hui Pan2,3; Xingqiang Shi1 | |
2019-12-18 | |
Source Publication | Advanced Electronic Materials |
ISSN | 2199-160X |
Volume | 6Issue:3Pages:1900981 |
Abstract | Two-dimensional (2D) layered semiconductors with an intrinsic electric dipole p (pS for short), including group III-VI ferroelectrics and various Janus semiconductors, are attracting increasing attention for their exotic properties and versatile applications. Their potential in metal–semiconductor junctions is revealed. It is demonstrated that, for pS contacting to 2D metals with a wide range of work-functions, Schottky-barrier-free (SB-free) and tunable n- to p-type contacts can be obtained, which is important for complementary metal-oxide-semiconductor logical circuitry. As expected, low (high) work-function (WF) metals form n-type (p-type) SB-free contacts to pS. What is unexpected is the behavior of medium-WF metal-pS junctions (MpSJ); that is, by switching the polarization in pS, both n- and p-type SB-free contacts can be obtained by the same pS contacting to metals with a wide range of WF. More importantly, MpSJ with bilayer pS can form both n- and p-type SB-free contacts. These findings, SB-free and contact-type-tunable of MpSJ for metals with a wide range of work-functions, demonstrate the great potential of 2D pS for device applications. |
Keyword | 2d Janus Semiconductors Group Iii 2-vi 3 Ferroelectrics Schottky-barrier-free Contact Tunable N- To P-type Contacts |
DOI | 10.1002/aelm.201900981 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS ID | WOS:000503218900001 |
Publisher | WILEY111 RIVER ST, HOBOKEN 07030-5774, NJ |
Scopus ID | 2-s2.0-85076773721 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | Faculty of Science and Technology INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING DEPARTMENT OF PHYSICS AND CHEMISTRY |
Corresponding Author | Hui Pan; Xingqiang Shi |
Affiliation | 1.Department of Physics and Guangdong Provincial Key Laboratory for Computational Science and Material Design,Southern University of Science and Technology,Shenzhen,518055,China 2.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,999078,Macao 3.Department of Physics and Chemistry,Faculty of Science and Technology,University of Macau,999078,Macao |
First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING; Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Yangfan Shao,Qian Wang,Hui Pan,et al. Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions[J]. Advanced Electronic Materials, 2019, 6(3), 1900981. |
APA | Yangfan Shao., Qian Wang., Hui Pan., & Xingqiang Shi (2019). Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions. Advanced Electronic Materials, 6(3), 1900981. |
MLA | Yangfan Shao,et al."Van der Waals Contact to 2D Semiconductors with a Switchable Electric Dipole: Achieving Both n- and p-Type Ohmic Contacts to Metals with a Wide Range of Work Functions".Advanced Electronic Materials 6.3(2019):1900981. |
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