In this work, the resistive memory devices were fabricated based on all-inorganic CsPbBr₃ nanocrystals (NCs) embedded into the insulating polymethylmethacrylate (PMMA) with a configuration of Au/PMMA/PMMA: CsPbBr₃ NCs/PMMA/indium tin oxide (ITO). The as-fabricated devices exhibit forming-free bipolar resistive switching with resistance ratio of HRS to LRS (R_H/L) evolving from metastable 10⁶ to stable 10. In HRS with high R_H/L, the devices witness the prompt photoresponse under light illumination of 365 nm, 405 nm, 420 nm, and 500 nm. Also, set voltages of resistive switching with low R_H/L can be reduced by the illumination. Furthermore, the resistive switching and photoresponse of Au/PMMA/PMMA: CsPbBr₃ NCs/PMMA/ITO devices were elucidated by considering the photosensitive property and role of trapping/de-trapping centers of CsPbBr₃ NCs. This work suggests the tunable resistive switching of Au/PMMA/PMMA: CsPbBr₃ NCs/PMMA/ITO devices through light illumination, and controllable photoresponse by resistive states.