Residential College | false |
Status | 已發表Published |
Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden–Popper Perovskite Engineered by Inorganic Layer Thickness | |
Liang,Yin1; Shang,Qiuyu1; Wei,Qi1,2; Zhao,Liyun1; Liu,Zhen1; Shi,Jia3; Zhong,Yangguang3; Chen,Jie3; Gao,Yan1; Li,Meili1; Liu,Xinfeng3; Xing,Guichuan4; Zhang,Qing1 | |
2019-09 | |
Source Publication | Advanced Materials |
ISSN | 0935-9648 |
Volume | 31Issue:39 |
Abstract | 2D Ruddlesden–Popper perovskites (RPPs) have aroused growing attention in light harvesting and emission applications owing to their high environmental stability. Recently, coherent light emission of RPPs was reported, however mostly from inhomologous thin films that involve cascade intercompositional energy transfer. Lasing and fundamental understanding of intrinsic laser dynamics in homologous RPPs free from intercompositional energy transfer is still inadequate. Herein, the lasing and loss mechanisms of homologous 2D (BA)(MA) PbI RPP thin flakes mechanically exfoliated from the bulk crystal are reported. Multicolor lasing is achieved from the large-n RPPs (n ≥ 3) in the spectral range of 620–680 nm but not from small-n RPPs (n ≤ 2) even down to 78 K. With decreasing n, the lasing threshold increases significantly and the characteristic temperature decreases as 49, 25, and 20 K for n = 5, 4, and 3, respectively. The n-engineered lasing behaviors are attributed to the stronger Auger recombination and exciton–phonon interaction as a result of the enhanced quantum confinement in the smaller-n perovskites. These results not only advance the fundamental understanding of loss mechanisms in both inhomologous and homologous RPP lasers but also provide insights into developing low-threshold, substrate-free, and multicolor 2D semiconductor microlasers. |
Keyword | 2d Semiconductors Carrier Dynamics Lasing Layered Materials Microlasers Ruddlesden–popper Perovskites |
DOI | 10.1002/adma.201903030 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS Subject | Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
WOS ID | WOS:000481221100001 |
Publisher | WILEY-V C H VERLAG GMBH, POSTFACH 101161, 69451 WEINHEIM, GERMANY |
Scopus ID | 2-s2.0-85070705923 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Xing,Guichuan; Zhang,Qing |
Affiliation | 1.Department of Materials Science and Engineering,College of Engineering,Peking University,Beijing,100871,China 2.MIIT Key Laboratory of Flexible Electronics (KLoFE),Xi'an Institute of Flexible Electronics,Northwestern Polytechnical University,Xi'an,710072,China 3.CAS Key Laboratory of Standardization and Measurement for Nanotechnology,CAS Center for Excellence in Nanoscience,National Center for Nanoscience and Technology,Beijing,100190,China 4.Joint Key Laboratory of the Ministry of Education,Institute of Applied Physics and Materials Engineering,University of Macau,Avenida da Universidade,Taipa,999078,Macao |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | Liang,Yin,Shang,Qiuyu,Wei,Qi,et al. Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden–Popper Perovskite Engineered by Inorganic Layer Thickness[J]. Advanced Materials, 2019, 31(39). |
APA | Liang,Yin., Shang,Qiuyu., Wei,Qi., Zhao,Liyun., Liu,Zhen., Shi,Jia., Zhong,Yangguang., Chen,Jie., Gao,Yan., Li,Meili., Liu,Xinfeng., Xing,Guichuan., & Zhang,Qing (2019). Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden–Popper Perovskite Engineered by Inorganic Layer Thickness. Advanced Materials, 31(39). |
MLA | Liang,Yin,et al."Lasing from Mechanically Exfoliated 2D Homologous Ruddlesden–Popper Perovskite Engineered by Inorganic Layer Thickness".Advanced Materials 31.39(2019). |
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