Residential College | false |
Status | 已發表Published |
Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition | |
Rashid, Rashad1,2; Ling, Francis Chi Chung1; Wang, Shuang Peng3; Xiao, Ke1; Cui, Xiaodong1; Chan, T. H.4; Ong, H. C.4; Azeem, Waqar1; Younas, Muhammad5 | |
2020-10-15 | |
Source Publication | Nanoscale |
ISSN | 2040-3364 |
Volume | 12Issue:39Pages:20189-20201 |
Abstract | For potential applications in ferroelectric switching and piezoelectric nano-generator devices, the promising ferroelectric properties of two dimensional (2D) layered In2Se3 attracted much attention. In the present study, 2D In2Se3 flakes down to monolayers are grown by the chemical vapor deposition (CVD) technique on a mica substrate with their structural, optical and ferroelectric properties being studied. The effect of growth parameters (time of growth and Ar flow rate) on the shape and size of the deposited flakes was studied. The optical microscopy study revealed that the flake changed from a circular shape to a sharp face triangle as the Ar flow rate and growth time increased. Raman spectroscopy and high-resolution scanning transmission electron microscopy (HR-STEM) studies revealed that the flakes were of α and β phases, each of which has a hexagonal crystal structure. Strong second harmonic generation (SHG) was observed from α-In2Se3, demonstrating its non-centrosymmetric structure. The piezo-force microscopic (PFM) study showed the presence of out of plane (OOP) ferroelectricity with no in plane (IP) ferroelectricity in CVD grown α-In2Se3 indicating its vertically confined piezoresponse, which was tuned by the applied electric bias and the flake thickness. The present result of shape-controlled growth of In2Se3 with OOP ferroelectricity would open new pathways in the field of 2D ferroelectric switching devices. |
DOI | 10.1039/c9nr10207h |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics |
WOS Subject | Chemistry, Multidisciplinary ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS ID | WOS:000579877200049 |
Publisher | ROYAL SOC CHEMISTRY, THOMAS GRAHAM HOUSE, SCIENCE PARK, MILTON RD, CAMBRIDGE CB4 0WF, CAMBS, ENGLAND |
Scopus ID | 2-s2.0-85093538393 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Rashid, Rashad |
Affiliation | 1.Department of Physics, The University of Hong Kong, Pokfulam Road, China. E-mail: [email protected] 2.National Institute of Lasers and Optronics (NILOP), Islamabad, Pakistan 3.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao S.A.R., 999078, China 4.Department of Physics, The Chinese University of Hong Kong, Sha Tin, Hong Kong 5.PCG, Physics Division, PINSTECH, P.O. Nilore, Islamabad 45650, Pakistan |
Recommended Citation GB/T 7714 | Rashid, Rashad,Ling, Francis Chi Chung,Wang, Shuang Peng,et al. Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition[J]. Nanoscale, 2020, 12(39), 20189-20201. |
APA | Rashid, Rashad., Ling, Francis Chi Chung., Wang, Shuang Peng., Xiao, Ke., Cui, Xiaodong., Chan, T. H.., Ong, H. C.., Azeem, Waqar., & Younas, Muhammad (2020). Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition. Nanoscale, 12(39), 20189-20201. |
MLA | Rashid, Rashad,et al."Shape-control growth of 2D-In2Se3 with out-of-plane ferroelectricity by chemical vapor deposition".Nanoscale 12.39(2020):20189-20201. |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment