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A 0.35-V 5,200-μm² 2.1-MHz Temperature- Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator | |
Ka-Meng Lei1; Pui-In Mak2; Rui P. Martins3 | |
2021-09 | |
Source Publication | IEEE Journal of Solid-State Circuits |
ISSN | 0018-9200 |
Volume | 56Issue:9Pages:2701 - 2710 |
Abstract | This article describes a 2.1-MHz relaxation oscillator (RxO) for energy-harvesting Internet-of-Things (IoT) sensor nodes. The RxO features an asymmetric swing-boosted RC network and a dual-path comparator to surmount the challenges of sub-0.5-V operation while achieving temperature resilience. The former enables alternating the common-mode voltages at the output of the RC network to facilitate the sub-0.5-V operation, while the latter is outfitted with a delay generator for tracking the temperature-sensitive delay of the comparator. Prototyped in 28-nm CMOS, the RxO occupies a tiny footprint of 5,200 μ m². The power consumption is 1.4 μW at 0.35 V. The measured temperature stability is 158 ppm/°C (average of seven chips) over -20 °C-120 °C. It scores the best energy efficiency (667 fJ/cycle) among the reported MHz-range RxOs and has a figure-of-merit (181 dB) that compares favorably with the state-of-the-art. |
Keyword | Asymmetric Rc Network Circuit Stability Cmos Energy-harvesting Internet-of-things (Iot) Logic Gates Mos Devices Oscillators Relaxation Oscillator (Rxo) Resilience Stability Criteria Swing-boosting Temperature Resilience Thermal Stability Ultra-low-power Ultra-low-voltage (Ulv). |
DOI | 10.1109/JSSC.2021.3067051 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000690441300010 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 445 HOES LANE, PISCATAWAY, NJ 08855-4141 |
Scopus ID | 2-s2.0-85103882262 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Ka-Meng Lei |
Affiliation | 1.State Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics, University of Macau, Macao 999078, China, and also with the Department of ECE/Faculty of Science and Technology, University of Macau, Macao 999078, China 2.State Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics, University of Macau, Macao 999078, China, and also with the Department of ECE/Faculty of Science and Technology, University of Macau, Macao 999078, China. 3.State Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics, University of Macau, Macao 999078, China, and also with the Department of ECE/Faculty of Science and Technology, University of Macau, Macao 999078, China, on leave from the Instituto Superior Técnico, Universidade de Lisboa, 1649-004 Lisbon, Portugal. |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Ka-Meng Lei,Pui-In Mak,Rui P. Martins. A 0.35-V 5,200-μm² 2.1-MHz Temperature- Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator[J]. IEEE Journal of Solid-State Circuits, 2021, 56(9), 2701 - 2710. |
APA | Ka-Meng Lei., Pui-In Mak., & Rui P. Martins (2021). A 0.35-V 5,200-μm² 2.1-MHz Temperature- Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator. IEEE Journal of Solid-State Circuits, 56(9), 2701 - 2710. |
MLA | Ka-Meng Lei,et al."A 0.35-V 5,200-μm² 2.1-MHz Temperature- Resilient Relaxation Oscillator With 667 fJ/Cycle Energy Efficiency Using an Asymmetric Swing-Boosted RC Network and a Dual-Path Comparator".IEEE Journal of Solid-State Circuits 56.9(2021):2701 - 2710. |
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