Erratum: Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization (Proceedings of the National Academy of Sciences of the United States of America (2020) 117 (13929-13936) DOI: 10.1073/pnas.2007495117)

doi:10.1073/pnas.2012778117

UM > INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING

Residential College	false
Status	已發表Published
	Erratum: Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization (Proceedings of the National Academy of Sciences of the United States of America (2020) 117 (13929-13936) DOI: 10.1073/pnas.2007495117)
	Jing Wu 1,2; Yanpeng Liu 2,3,4; Yi Liu 2,5; Yongqing Cai6 ; Yunshan Zhao 2,5,7; Hong Kuan Ng 1,8; Takashi Taniguchi 9; Taniguchi, Takashi 9; Gang Zhang 10; Cheng-Wei Qiu 2,5,11; Dongzhi Chi 1; A. H. Castro Neto 2,8; John T. L. Thong 2,5; Kian Ping Loh 2,3,11; Kedar Hippalgaonkar 1,2,12
	2020-07-20
Media	PNAS
DOI	10.1073/pnas.2012778117
Language	英語English
URL	View the original
Scopus ID	2-s2.0-85088881564
Fulltext Access	View Full-Text via DOI View Full-Text via Web of Science View Full-Text via Scopus
Citation statistics
Document Type	Other
Collection	INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Affiliation	1.Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, 138634, Singapore 2.Centre for Advanced 2D Materials, National University of Singapore, Singapore, 117546, Singapore 3.Department of Chemistry, National University of Singapore, Singapore, 117542, Singapore 4.Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China 5.Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117583, Singapore 6.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China 7.School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China 8.Department of Physics, National University of Singapore, Singapore, 117542, Singapore 9.Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, 1-1 Namiki, 305-0044, Japan 10.Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore, 138632, Singapore 11.Shenzhen University, National University of Singapore Collaborative Innovation, Center for Optoelectronic Science and Technology, Shenzhen University, Shenzhen, 518060, China 12.Department of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
Recommended Citation GB/T 7714	Jing Wu,Yanpeng Liu,Yi Liu,et al. Erratum: Large enhancement of thermoelectric performance in MoS2/h-BN heterostructure due to vacancy-induced band hybridization (Proceedings of the National Academy of Sciences of the United States of America (2020) 117 (13929-13936) DOI: 10.1073/pnas.2007495117). 2020-07-20.

Files in This Item:
There are no files associated with this item.

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Affiliation No.
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh