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A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array
Dong, Li1; Song, Yan2; Xie, Yi1; Xin, Youze1; Li, Ken1; Jing, Xixin1; Zhang, Bing1; Gui, Xiaoyan1; Geng, Li1
2021-05-16
Source PublicationMicroelectronics Journal
ISSN0026-2692
Volume113Pages:105109
Abstract

This paper presents an effective method to arrange high linearity and area-efficient digital-to-analog converter (DAC) to enhance the resolution of successive approximation register (SAR) analog-to-digital converter (ADC). The relationship between ENOB and DAC mismatch error is theoretically analyzed, which gives the guidance of optimizing the mismatch error of DAC array. The parasitic effect on the linearity of DAC can be obtained through a normalized parasitic capacitor model, which evaluates the parasitic capacitors caused by the layout and routing of DAC array. A 10-bit 20 MS/s SAR ADC with redundancy is fabricated with 0.18 μm CMOS process. Measurement results show that the signal-to-noise and distortion ratio (SNDR) and the spurious-free dynamic range (SFDR) are 57.9 dB and 75.9 dB, respectively. The SAR ADC achieves a Walden FoM (FoM) of 75.1 fJ/conversion step and occupies a small active area of 0.069 mm benefited from the compact layout.

KeywordAnalog-to-digital Converter (Adc) Area-efficient Dac Mismatch High Linearity Insensitive Geometry
DOI10.1016/j.mejo.2021.105109
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering ; Science & Technology - Other Topics
WOS SubjectEngineering, Electrical & Electronic ; Nanoscience & Nanotechnology
WOS IDWOS:000660447100008
PublisherElsevier Ltd
Scopus ID2-s2.0-85106492440
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Faculty of Science and Technology
THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU)
Corresponding AuthorZhang, Bing; Geng, Li
Affiliation1.School of Microelectronics, Xi'an Jiaotong University, Xi'an, 710049, China
2.State Key Laboratory of Analog and Mixed Signal VLSI, DECE/FST, University of Macau, Macau, 999078, China
Recommended Citation
GB/T 7714
Dong, Li,Song, Yan,Xie, Yi,et al. A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array[J]. Microelectronics Journal, 2021, 113, 105109.
APA Dong, Li., Song, Yan., Xie, Yi., Xin, Youze., Li, Ken., Jing, Xixin., Zhang, Bing., Gui, Xiaoyan., & Geng, Li (2021). A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array. Microelectronics Journal, 113, 105109.
MLA Dong, Li,et al."A 10-bit 20-MS/s SAR DAC achieving 57.9-dB SNDR using insensitive geometry DAC array".Microelectronics Journal 113(2021):105109.
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