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Quantum oscillations and quasilinear magnetoresistance in the topological semimetal candidate ScSn2
Chen, Y.1; Tang, F.1,2; Meng, W. Z.3; Shen, X.1; Zhao, W.4; Yin, X. Q.5,6; Cong, S.1; Yi, Q. H.1; Zhang, L.1; Wu, D. J.1; Han, Z. D.1; Qian, B.1; Jiang, X. F.1; Zhang, X. M.3; Fang, Y.1
2021-10-15
Source PublicationPhysical Review B
ISSN2469-9950
Volume104Issue:16Pages:165128
Other Abstract

Novel compounds with two-dimensional square lattices formed by group IV or V elements (Si, Sn, Ge, Bi, and Sb) have been attracting a great deal of attention in recent times, mainly because of the possible emergence of various topological phases therein. Here, we successfully grow the single crystals of Sn-square-net based material , and systematically perform their magnetization and magnetotransport measurements. Clear quantum oscillations emerge in the magnetization isotherms along different field orientations, from which nonzero Berry phases are extracted, implying that harbors three-dimensional Fermi surfaces and nontrivial electronic states. Similar to many other topological semimetals with extremely large magnetoresistance, shows field-induced resistivity enhancement as well, which has been proven to be not of a gap opening origin. Besides, at low temperature, large magnetoresistance with a quasilinear field dependence is observed. Our analysis of the magnetotransport data finds that the quasilinear magnetoresistance in cannot be understood by several familiar mechanisms proposed in the literature. These findings are expected to have far reaching implications for both the fundamental understanding and magnetoresistance device application of topological semimetal materials.

DOI10.1103/PhysRevB.104.165128
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science ; Physics
WOS SubjectMaterials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS IDWOS:000707475100001
Scopus ID2-s2.0-85117152486
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Co-First AuthorChen, Y.
Corresponding AuthorQian, B.; Zhang, X. M.; Fang, Y.
Affiliation1.Jiangsu Laboratory of Advanced Functional Materials, Department of Physics, Changshu Institute of Technology, Changshu, 215500, China
2.Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
3.School of Materials Science and Engineering, Hebei University of Technology, Tianjin, 300130, China
4.ISEM, Innovation Campus, University of Wollongong, Wollongong, 2500, Australia
5.Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Avenida da Universidade, 999078, Macao
6.Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy and Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai, 200240, China
Recommended Citation
GB/T 7714
Chen, Y.,Tang, F.,Meng, W. Z.,et al. Quantum oscillations and quasilinear magnetoresistance in the topological semimetal candidate ScSn2[J]. Physical Review B, 2021, 104(16), 165128.
APA Chen, Y.., Tang, F.., Meng, W. Z.., Shen, X.., Zhao, W.., Yin, X. Q.., Cong, S.., Yi, Q. H.., Zhang, L.., Wu, D. J.., Han, Z. D.., Qian, B.., Jiang, X. F.., Zhang, X. M.., & Fang, Y. (2021). Quantum oscillations and quasilinear magnetoresistance in the topological semimetal candidate ScSn2. Physical Review B, 104(16), 165128.
MLA Chen, Y.,et al."Quantum oscillations and quasilinear magnetoresistance in the topological semimetal candidate ScSn2".Physical Review B 104.16(2021):165128.
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