Residential College | false |
Status | 已發表Published |
A 0.4V 430nA Quiescent Current NMOS Digital LDO with NAND-Based Analog-Assisted Loop in 28nm CMOS | |
Xiaofei Ma1,2; Yan Lu1; Rui P. Martins1,3; Qiang Li2 | |
2018 | |
Conference Name | 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 |
Source Publication | 2018 IEEE International Solid - State Circuits Conference - (ISSCC) |
Pages | 306-308 |
Conference Date | FEB 11-15, 2018 |
Conference Place | San Francisco, CA, United states |
Author of Source | Institute of Electrical and Electronics Engineers Inc. |
Abstract | Ultra-low-power fully-integrated voltage regulators with fast load-transient performance are highly attractive for low-power systems-on-a-chip (SoCs). In such systems, the digital units working in the subthreshold region are more sensitive to supply variations. The digital low-dropout regulator (DLDO) is more suitable for low-supply-voltage operation, as compared to an analog LDO regulator. But, traditional DLDOs are either slow or power hungry, and need a large output capacitor (consumes area) to survive a fast load transient. When a higher clock frequency is used for faster response, both the current efficiency and the loop stability are degraded [1]. An analog-assisted (AA) loop was used in [2] to provide a high-pass loop in parallel with the slow digital loop for fast response. However, a large coupling capacitor (100pF) was still needed, trading off area with power and speed. An NMOS power stage as a source follower is sometimes used in replica LDOs and cascaded LDOs [3] for its intrinsic response to load transient; the NMOS source follower naturally provides more output current when VOUTdrops. To improve upon the power-speed-area tradeoffs, this paper presents a DLDO using NMOS power switches, and employs a NAND-gate-based high-pass analog path (NAP) to assist the slow low-power digital loop. With these two techniques, nearly two orders of better FoM is achieved relative to the state-of-the-art. © 2018 IEEE. |
DOI | 10.1109/ISSCC.2018.8310306 |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000459205600125 |
Scopus ID | 2-s2.0-85046438636 |
Fulltext Access | |
Citation statistics | |
Document Type | Conference paper |
Collection | INSTITUTE OF MICROELECTRONICS |
Affiliation | 1.University of Macau, Macau, China 2.University of Electronic Science and Technology of China, Chengdu, China 3.Instituto Superior Tecnico/University of Lisboa, Lisbon, Portugal |
First Author Affilication | University of Macau |
Recommended Citation GB/T 7714 | Xiaofei Ma,Yan Lu,Rui P. Martins,et al. A 0.4V 430nA Quiescent Current NMOS Digital LDO with NAND-Based Analog-Assisted Loop in 28nm CMOS[C]. Institute of Electrical and Electronics Engineers Inc., 2018, 306-308. |
APA | Xiaofei Ma., Yan Lu., Rui P. Martins., & Qiang Li (2018). A 0.4V 430nA Quiescent Current NMOS Digital LDO with NAND-Based Analog-Assisted Loop in 28nm CMOS. 2018 IEEE International Solid - State Circuits Conference - (ISSCC), 306-308. |
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