Residential College | false |
Status | 已發表Published |
Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes | |
Wang, Ting1; Zhu, Bingyan1; Wang, Shuangpeng2; Yuan, Qilin1; Zhang, Han1; Kang, Zhihui1; Wang, Rong1; Zhang, Hanzhuang1; Ji, Wenyu1 | |
2018-05-02 | |
Source Publication | ACS APPLIED MATERIALS & INTERFACES |
ISSN | 1944-8244 |
Volume | 10Issue:17Pages:14894-14900 |
Abstract | The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting diodes (QLEDs) is explored by employing a series of green quantum dots (QDs) (ZnxCd1-xSe/ZnS core/shell QDs with different ZnS shell thicknesses) as the emitters. ZnO nanoparticles and sol-gel NiO are employed as the electron and hole transport materials, respectively. Time resolved and steady-state photoluminescence results indicate that positive charging processes might occur for the QDs deposited on NiO, which results in emission quenching of QDs and poor device performance. The thick shell outside the core in QDs not only largely suppresses the QD emission quenching but also effectively preserves the excitons in QDs from dissociation of electron-hole pairs when they are subjected to an electric field. The peak efficiency of 4.2 cd/A and maximum luminance of 4205 cd/m(2) are achieved for the device based on QDs with the thickest shells (similar to 4.2 nm). We anticipate that these results will spur progress toward the design and realization of efficient all-inorganic QLEDs as a platform for the QD-based full-colored displays. |
Keyword | Qleds All-inorganic Exciton Quenching Exciton Dissociation Charging Quantum Dot |
DOI | 10.1021/acsami.8b01814 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Science & Technology - Other Topics ; Materials Science |
WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary |
WOS ID | WOS:000431723400072 |
Publisher | AMER CHEMICAL SOC |
The Source to Article | WOS |
Scopus ID | 2-s2.0-85046360924 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Wang, Rong; Ji, Wenyu |
Affiliation | 1.Jilin Univ, Coll Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China 2.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macao, Peoples R China |
Recommended Citation GB/T 7714 | Wang, Ting,Zhu, Bingyan,Wang, Shuangpeng,et al. Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes[J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10(17), 14894-14900. |
APA | Wang, Ting., Zhu, Bingyan., Wang, Shuangpeng., Yuan, Qilin., Zhang, Han., Kang, Zhihui., Wang, Rong., Zhang, Hanzhuang., & Ji, Wenyu (2018). Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES, 10(17), 14894-14900. |
MLA | Wang, Ting,et al."Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes".ACS APPLIED MATERIALS & INTERFACES 10.17(2018):14894-14900. |
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