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Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes
Wang, Ting1; Zhu, Bingyan1; Wang, Shuangpeng2; Yuan, Qilin1; Zhang, Han1; Kang, Zhihui1; Wang, Rong1; Zhang, Hanzhuang1; Ji, Wenyu1
2018-05-02
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume10Issue:17Pages:14894-14900
Abstract

The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting diodes (QLEDs) is explored by employing a series of green quantum dots (QDs) (ZnxCd1-xSe/ZnS core/shell QDs with different ZnS shell thicknesses) as the emitters. ZnO nanoparticles and sol-gel NiO are employed as the electron and hole transport materials, respectively. Time resolved and steady-state photoluminescence results indicate that positive charging processes might occur for the QDs deposited on NiO, which results in emission quenching of QDs and poor device performance. The thick shell outside the core in QDs not only largely suppresses the QD emission quenching but also effectively preserves the excitons in QDs from dissociation of electron-hole pairs when they are subjected to an electric field. The peak efficiency of 4.2 cd/A and maximum luminance of 4205 cd/m(2) are achieved for the device based on QDs with the thickest shells (similar to 4.2 nm). We anticipate that these results will spur progress toward the design and realization of efficient all-inorganic QLEDs as a platform for the QD-based full-colored displays.

KeywordQleds All-inorganic Exciton Quenching Exciton Dissociation Charging Quantum Dot
DOI10.1021/acsami.8b01814
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics ; Materials Science
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS IDWOS:000431723400072
PublisherAMER CHEMICAL SOC
The Source to ArticleWOS
Scopus ID2-s2.0-85046360924
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorWang, Rong; Ji, Wenyu
Affiliation1.Jilin Univ, Coll Phys, Minist Educ, Key Lab Phys & Technol Adv Batteries, 2699 Qianjin St, Changchun 130012, Jilin, Peoples R China
2.Univ Macau, Inst Appl Phys & Mat Engn, Ave Univ, Taipa 999078, Macao, Peoples R China
Recommended Citation
GB/T 7714
Wang, Ting,Zhu, Bingyan,Wang, Shuangpeng,et al. Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes[J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10(17), 14894-14900.
APA Wang, Ting., Zhu, Bingyan., Wang, Shuangpeng., Yuan, Qilin., Zhang, Han., Kang, Zhihui., Wang, Rong., Zhang, Hanzhuang., & Ji, Wenyu (2018). Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES, 10(17), 14894-14900.
MLA Wang, Ting,et al."Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes".ACS APPLIED MATERIALS & INTERFACES 10.17(2018):14894-14900.
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