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A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA | |
Qi, Gengzhen1; van Liempd, Barend2; Mak, Pui-In3; Martins, Rui P.3; Craninckx, Jan2 | |
2018-05 | |
Source Publication | IEEE JOURNAL OF SOLID-STATE CIRCUITS |
ISSN | 0018-9200 |
Volume | 53Issue:5Pages:1431-1442 |
Abstract | This paper proposes a surface-acoustic wave (SAW)less tunable RF front end (RF-FE) using an electrical-balance duplexer (EBD) integrated with a switched-LC N-path low-noise amplifier (LNA). The EBD cancels the transmitter-receiver (TX-RX) leakage at the RX frequency by dynamically optimizing the balance of a hybrid transformer, which enables in-band full-duplex (IBFD) operation. A transconductor-based LNA in parallel with a switched-LC N-path network creates input and output notches to reject TX leakage for frequency-division duplexing (FDD) operation. The LNA's signal-handling capability is enhanced via optimum switch biasing. Fabricated in 0.18-mu m SOI CMOS, the RF-FE offers > 50-dB tunable rejection from the TX port to LNA output at both TX and RX frequencies, for all 3GPP bands from 0.7 to 1 GHz (i.e., FDD case). It is the first tunable RF-FE including an LNA that achieves + 70-dBm TX-path IIP3, and <-100-dBm IM3 at + 20-dBm TX power when a full-duplex spaced jammer is applied at the antenna (FDD case). It is also the first to handle >+ 30-dBm in-band TX power while cancelling the self-interference by > 50 dB (i.e., IBFD case). The RF-FE consumes 62.5 mW at 1 GHz with 11.7-dB RX cascaded NF, 3.6-dB TX insertion loss, and 9.62 mm(2) active area. |
Keyword | Electrical-balance Duplexer (Ebd) In-band Full Duplex (Ibfd) Local Thermal Equilibrium (Lte)-frequency-division Duplexing (Fdd) Low-noise Amplifier (Lna) Rf Front-end (Rf-fe) Soi Cmos Switched-lc N-path Filtering Tunable |
DOI | 10.1109/JSSC.2018.2791477 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000430959900017 |
Publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
The Source to Article | WOS |
Scopus ID | 2-s2.0-85041387693 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING Faculty of Science and Technology THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) INSTITUTE OF MICROELECTRONICS |
Corresponding Author | Mak, Pui-In |
Affiliation | 1.Perceptive Systems, IMEC, Leuven, Belgium 2.IMEC, Leuven, Belgium 3.Department of ECE, State-Key Laboratory of Analog and Mixed-Signal VLSI, Faculty of Science and Technology, University of Macau, Macao, China |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Qi, Gengzhen,van Liempd, Barend,Mak, Pui-In,et al. A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53(5), 1431-1442. |
APA | Qi, Gengzhen., van Liempd, Barend., Mak, Pui-In., Martins, Rui P.., & Craninckx, Jan (2018). A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 53(5), 1431-1442. |
MLA | Qi, Gengzhen,et al."A SAW-Less Tunable RF Front End for FDD and IBFD Combining an Electrical-Balance Duplexer and a Switched-LC N-Path LNA".IEEE JOURNAL OF SOLID-STATE CIRCUITS 53.5(2018):1431-1442. |
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