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Resolution-enhanced sturdy MASH delta–sigma modulator for wideband low-voltage applications
Qi, L.; Sin, S. W.; U, S.P.; Martins, R. P.
2015-07-01
Source PublicationElectronics Letters
ISSN0013-5194
Pages1061-1063
Abstract

A resolution-enhanced sturdy multi-stage noise shaping (MASH) delta-sigma modulator is presented. By employing the Leslie-Singh architecture in the first stage and an appropriate second stage digital filtering, the proposed structure could achieve much higher resolution [>80 dB signal-to-quantisation noise ratio] when compared with a traditional sturdy MASH, at a lower oversampling ratio (e.g. 8X). Interestingly, the mismatch between digital and analogue transfer functions is inherently shaped so that the structure is not sensitive to opamp finite gain error. Both these properties make the proposed structure suitable for wideband low-voltage applications. Behavioural simulations are presented to demonstrate the effectiveness of the proposed structure when compared with the prior art of its high performance delta-sigma counterparts.

KeywordAnalog-to-digital Converters Sigma-delta
DOI10.1049/el.2015.1655
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaEngineering
WOS SubjectEngineering, Electrical & Electronic
WOS IDWOS:000357314600010
The Source to ArticlePB_Publication
Scopus ID2-s2.0-84936856329
Fulltext Access
Citation statistics
Document TypeJournal article
CollectionDEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING
Corresponding AuthorSin, S. W.
Recommended Citation
GB/T 7714
Qi, L.,Sin, S. W.,U, S.P.,et al. Resolution-enhanced sturdy MASH delta–sigma modulator for wideband low-voltage applications[J]. Electronics Letters, 2015, 1061-1063.
APA Qi, L.., Sin, S. W.., U, S.P.., & Martins, R. P. (2015). Resolution-enhanced sturdy MASH delta–sigma modulator for wideband low-voltage applications. Electronics Letters, 1061-1063.
MLA Qi, L.,et al."Resolution-enhanced sturdy MASH delta–sigma modulator for wideband low-voltage applications".Electronics Letters (2015):1061-1063.
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