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A 1.7–3.6 GHz 20 MHz-Bandwidth Channel-Selection N-Path Passive-LNA Using a Switched-Capacitor-Transformer Network Achieving 23.5 dBm OB-IIP₃ and 3.4–4.8 dB NF | |
Shao, Haijun1; Qi, Gengzhen2,3; Mak, Pui In4; Martins, Rui P.5,6 | |
2022-02-01 | |
Source Publication | IEEE Journal of Solid-State Circuits |
ISSN | 0018-9200 |
Volume | 57Issue:2Pages:413-422 |
Abstract | This article reports a channel-selection N-path passive low-noise amplifier (pLNA) featuring only switches, capacitors, and a step-up transformer (i.e. a SCT network) to build a highly linear, frequency-tunable, and high-Q bandpass response with in-band voltage gain and input-impedance matching. We also reveal the inductive and lowpass properties of the step-up transformer, composed of two vertically coupled spiral coils, for passband centering with the local oscillator (LO) frequency, and harmonic-folding reduction. Prototyped in 28 nm CMOS, a 4-path 20 MHz-bandwidth pLNA scores a 9.8 dB voltage gain and a 3.4–4.8 dB NF over a 1.7–3.6 GHz range. At 3 GHz, the out-of-band (OB)-IIP3 measures +23.5 dBm, and the 3rd-harmonic-folding rejection ratio (HFRR3) is 33 dB. With a blocker applied at the 80 MHz offset, the blocker −1 dB compression point ( text{B}_{-1,text {dB}} ) attains +1.7 dBm, and the blocker NF only raises moderately to 4.7 dB up to a 0 dBm blocker power. The only dynamic power comes from the four-phase 25%-duty-cycle LO generator that consumes 17.8–38.2 mW between 1.7 and 3.6 GHz. The entire pLNA occupies a 0.84 mm die area. |
Keyword | Bandpass Filtering Channel-selection Cmos Harmonic-folding Rejection Ratio (Hfrr) Linearity Local Oscillator (Lo) Low-noise Amplifier (Lna) N-path Filter Noise Figure (Nf) Out-of-band (Ob) Linearity Passive Lna (pLna) Radio Frequency (Rf) Receiver (Rx) Switched-capacitor-transformer (Sct) Network Transformer |
DOI | 10.1109/JSSC.2021.3129744 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Engineering |
WOS Subject | Engineering, Electrical & Electronic |
WOS ID | WOS:000733309300001 |
Scopus ID | 2-s2.0-85121788853 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF MICROELECTRONICS Faculty of Science and Technology THE STATE KEY LABORATORY OF ANALOG AND MIXED-SIGNAL VLSI (UNIVERSITY OF MACAU) DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING |
Corresponding Author | Martins, Rui P. |
Affiliation | 1.University of Macau, State-Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics and Faculty of Science and Technology – ECE, Macao 2.University of Macau, State-Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics and Faculty of Science and Technology – ECE, Macao 3.Sun Yat-Sen University, Guangdong, China 4.University of Macau, State-Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics and Faculty of Science and Technology – ECE, Macao 5.University of Macau, State-Key Laboratory of Analog and Mixed-Signal VLSI/Institute of Microelectronics and Faculty of Science and Technology – ECE, Macao 6.Universidade de Lisbon, Instituto Superior Técnico, Lisbon, 1749, Portugal |
First Author Affilication | Faculty of Science and Technology |
Corresponding Author Affilication | Faculty of Science and Technology |
Recommended Citation GB/T 7714 | Shao, Haijun,Qi, Gengzhen,Mak, Pui In,et al. A 1.7–3.6 GHz 20 MHz-Bandwidth Channel-Selection N-Path Passive-LNA Using a Switched-Capacitor-Transformer Network Achieving 23.5 dBm OB-IIP₃ and 3.4–4.8 dB NF[J]. IEEE Journal of Solid-State Circuits, 2022, 57(2), 413-422. |
APA | Shao, Haijun., Qi, Gengzhen., Mak, Pui In., & Martins, Rui P. (2022). A 1.7–3.6 GHz 20 MHz-Bandwidth Channel-Selection N-Path Passive-LNA Using a Switched-Capacitor-Transformer Network Achieving 23.5 dBm OB-IIP₃ and 3.4–4.8 dB NF. IEEE Journal of Solid-State Circuits, 57(2), 413-422. |
MLA | Shao, Haijun,et al."A 1.7–3.6 GHz 20 MHz-Bandwidth Channel-Selection N-Path Passive-LNA Using a Switched-Capacitor-Transformer Network Achieving 23.5 dBm OB-IIP₃ and 3.4–4.8 dB NF".IEEE Journal of Solid-State Circuits 57.2(2022):413-422. |
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