Residential College | false |
Status | 已發表Published |
Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field | |
Yan, Xuefei1; Ke, Qingqing2,3; Cai, Yongqing1 | |
2022-06-25 | |
Source Publication | Nanotechnology |
ISSN | 0957-4484 |
Volume | 33Issue:26 |
Abstract | By utilizing the tight-binding method, the electronic spectrum and states distribution of square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the presence of a perpendicular magnetic field are explored. Strong in-gap states of b-AsP QDs, whose probability densities are distributed on the armchair boundary (armchair edge states) appear in the energy gap of host perfect two-dimensional b-AsP. The corresponding energy levels of the armchair edge states can degenerate to the Landu energy levels upon applying a perpendicular magnetic field. When an in-plane polarized light is introduced, due to the presence of armchair edge states, the edge-to-edge transitions are mainly induced from the armchair edge (hole) states to zigzag edge (electron) states. The optical absorption undergoes blue shift as a function of the magnetic field. Our work suggests tunable optical properties via modulating the armchair edge states of a b-AsP QD and provides a theoretical basis for the design of b-AsP-based optoelectronic devices. |
Keyword | Janus Structures Black Arsenic-phosphorus Quantum Dots Electronic And Optical Properties Magnetic Field Tight-binding Method |
DOI | 10.1088/1361-6528/ac6007 |
URL | View the original |
Indexed By | SCIE |
Language | 英語English |
WOS Research Area | Science & Technology - Other Topics ; Materials Science ; Physics |
WOS Subject | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
WOS ID | WOS:000780049800001 |
Scopus ID | 2-s2.0-85128248967 |
Fulltext Access | |
Citation statistics | |
Document Type | Journal article |
Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author | Ke, Qingqing; Cai, Yongqing |
Affiliation | 1.Institute of Applied Physics and Materials Engineering, University of Macau, Macao 2.School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China 3.Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai, 519082, China |
First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Corresponding Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
Recommended Citation GB/T 7714 | Yan, Xuefei,Ke, Qingqing,Cai, Yongqing. Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field[J]. Nanotechnology, 2022, 33(26). |
APA | Yan, Xuefei., Ke, Qingqing., & Cai, Yongqing (2022). Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field. Nanotechnology, 33(26). |
MLA | Yan, Xuefei,et al."Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field".Nanotechnology 33.26(2022). |
Files in This Item: | There are no files associated with this item. |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment