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Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field
Yan, Xuefei1; Ke, Qingqing2,3; Cai, Yongqing1
2022-06-25
Source PublicationNanotechnology
ISSN0957-4484
Volume33Issue:26
Abstract

By utilizing the tight-binding method, the electronic spectrum and states distribution of square Janus monolayer black arsenic phosphorus (b-AsP) quantum dots (QDs) in the presence of a perpendicular magnetic field are explored. Strong in-gap states of b-AsP QDs, whose probability densities are distributed on the armchair boundary (armchair edge states) appear in the energy gap of host perfect two-dimensional b-AsP. The corresponding energy levels of the armchair edge states can degenerate to the Landu energy levels upon applying a perpendicular magnetic field. When an in-plane polarized light is introduced, due to the presence of armchair edge states, the edge-to-edge transitions are mainly induced from the armchair edge (hole) states to zigzag edge (electron) states. The optical absorption undergoes blue shift as a function of the magnetic field. Our work suggests tunable optical properties via modulating the armchair edge states of a b-AsP QD and provides a theoretical basis for the design of b-AsP-based optoelectronic devices.

KeywordJanus Structures Black Arsenic-phosphorus Quantum Dots Electronic And Optical Properties Magnetic Field Tight-binding Method
DOI10.1088/1361-6528/ac6007
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaScience & Technology - Other Topics ; Materials Science ; Physics
WOS SubjectNanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS IDWOS:000780049800001
Scopus ID2-s2.0-85128248967
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Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding AuthorKe, Qingqing; Cai, Yongqing
Affiliation1.Institute of Applied Physics and Materials Engineering, University of Macau, Macao
2.School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
3.Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, Sun Yat-sen University, Zhuhai, 519082, China
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Recommended Citation
GB/T 7714
Yan, Xuefei,Ke, Qingqing,Cai, Yongqing. Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field[J]. Nanotechnology, 2022, 33(26).
APA Yan, Xuefei., Ke, Qingqing., & Cai, Yongqing (2022). Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field. Nanotechnology, 33(26).
MLA Yan, Xuefei,et al."Electronic and optical properties of Janus black arsenic-phosphorus AsP quantum dots under magnetic field".Nanotechnology 33.26(2022).
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