UM
Patent NumberCN107230734A
Status申請中 Pending
一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法
Application NumberCN201710370282.8
Application Date2017-05-23
Rights Holder中国人民解放军63791部队
王玉超; 苏龙兴; 蒙蒙; 刘剑锋; 赵宇; 郑锦坚; 马忠权; 汤子康
Date Available2017-10-03
Country中国 China
Abstract本发明公开了一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法。其包括衬底、生长在衬底上的缓冲层、生长在缓冲层上的BeMgZnO合金外延层和蒸镀沉积在外延层上的肖特基接触的金属接触电极层;所述缓冲层为Mg、MgO、ZnO、BeO、BeZnO或MgZnO中的一种或多种组合材料组成;金属接触电极层包括内侧的钛、镍、铂、金、银或钼单层金属或金属复合层和外侧蒸镀的金层。本发明的器件避免了p型掺杂的困难,具有暗电流低、响应速度快、响应度高、制备工艺简单、可在零偏压下工作等优点,实现了器件的响应截止波长在近紫外到深紫外连续可调;还可与半导体平面工艺相容,有利于大规模集成,具有很好的应用前景。
Language中文Chinese
Open (Notice) NumberCN107230734A
IPC Classification NumberH01L31/108 ; H01L31/18 ; H01L31/032
CPC Classification NumberH01L31/108 ; H01L31/0326 ; Y02P70/50 ; H01L31/18
Patent Agent陈卫
Agency广州粤高专利商标代理有限公司 44102
Document TypePatent
CollectionUniversity of Macau
Recommended Citation
GB/T 7714
王玉超,苏龙兴,蒙蒙,等. 一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法. CN107230734A.
APA 王玉超., 苏龙兴., 蒙蒙., 刘剑锋., 赵宇., 郑锦坚., 马忠权., & 汤子康 (2017-05-23). 一种背对背肖特基结构的BeMgZnO基紫外探测器及其制备方法.
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