| Patent Number | CN110148713B |
| Status | 已授權 Granted |
| 一种碳包覆的富氮g-C3N4和负极材料及其制备方法 | |
| 2021-02-05 | |
| Application Number | CN201810148357.2 |
| Application Date | 2018-02-12 |
| Rights Holder | 澳门大学 |
| 潘晖; 钟熊伟 | |
| Date Available | 2021-02-05 |
| Country | 中国 China |
| Abstract | 本发明公开了一种碳包覆的富氮g‑C 3N4和负极材料及其制备方法，涉及锂电池材料技术领域。本发明公开的碳包覆的富氮g‑C3N4具有较高的活性位点和导电性能，此外，该碳包覆的富氮g‑C3N4还具有微‑纳米结构，有效防止团聚保证较高效的储锂性能。 |
| Language | 中文Chinese |
| Open (Notice) Number | CN110148713B |
| IPC Classification Number | H01M4/36 ; H01M4/583 ; H01M4/62 ; H01M10/052 |
| CPC Classification Number | H01M4/366 ; H01M4/583 ; H01M4/625 ; H01M10/052 ; H01M2004/021 ; H01M2004/027 ; Y02E60/10 |
| Patent Agent | 魏彦 |
| Agency | 成都超凡明远知识产权代理有限公司 51258 |
| Document Type | Patent |
| Collection | University of Macau |
| Recommended Citation GB/T 7714 | 潘晖,钟熊伟. 一种碳包覆的富氮g-C3N4和负极材料及其制备方法. CN110148713B[P]. 2021-02-05. |
| APA | 潘晖., & 钟熊伟 (2018-02-12). 一种碳包覆的富氮g-C3N4和负极材料及其制备方法. |
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment