| Residential College | false |
| Patent Number | CN110904497B |
| Status | 已授權 Granted |
| 厘米级铬氧化物单晶及其制备方法和存储器件 | |
| Year Issued | 2021-06-11 |
| 2021-06-11 | |
| Application Number | CN201911281088.8 |
| Application Date | 2019-12-13 |
| Rights Holder | 澳门大学 |
李海峰  ; 朱英浩; 吴思; 汤子康
| |
| Date Available | 2021-06-11 |
| Country | 中国 China |
| Subtype | 发明专利 Invention |
| Abstract | 本发明涉及单晶材料的制备领域，具体而言，涉及一种厘米级铬氧化物单晶及其制备方法和存储器件。该制备方法包括：利用等静压法对铬化合物和经过固相烧结形成的含铬的单相多晶物质的混合物进行造型，再利用激光浮区法生长形成厘米级铬氧化物单晶。通过上述方法能够制备得到厘米级的单晶，扩大其应用范围。 |
| Language | 中文Chinese |
| PCT Attributes | 否No |
| Open (Notice) Number | CN110904497B |
| IPC Classification Number | C30b13/00 ; C30b29/16 ; H01l43/10 |
| CPC Classification Number | C30b13/00 ; C30b29/16 ; H01l43/10 |
| Patent Agent | 王晖 ; 刘书芝 |
| Agency | 成都超凡明远知识产权代理有限公司 51258 |
| URL | View the original |
| Document Type | Patent |
| Collection | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Corresponding Author | 李海峰 |
| Affiliation | Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macao SAR, 999078, China |
| First Author Affilication | INSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING |
| Recommended Citation GB/T 7714 | 李海峰,朱英浩,吴思,等. 厘米级铬氧化物单晶及其制备方法和存储器件. CN110904497B[P]. 2021-06-11. |
| APA | 李海峰., 朱英浩., 吴思., & 汤子康 (2019-12-13). 厘米级铬氧化物单晶及其制备方法和存储器件. |
| Files in This Item: | Download All | |||||
| File Name/Size | Publications | Version | Access | License | ||
| PN19042879I-专利证书.pdf（1308KB） | Patent | 开放获取 | CC BY-NC-SA | View Download | ||
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