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A Novel 3-DoF Mode Localized BAW Resonant Mass Sensor With High Quality Factor and Resolution Journal article
Wang, Linlin, Quan, Aojie, Wang, Yuan, Pereira Madeira, Bernardo, Li, Chengxin, Kraft, Michael, Wang, Chen, Wang, Linlin, Quan, Aojie, Wang, Yuan, Pereira Madeira, Bernardo, Li, Chengxin, Kraft, Michael, Wang, Chen. A Novel 3-DoF Mode Localized BAW Resonant Mass Sensor With High Quality Factor and Resolution[J]. IEEE Transactions on Electron Devices, 2024, 71(8), 4926-4931.
Authors:  Wang, Linlin;  Quan, Aojie;  Wang, Yuan;  Pereira Madeira, Bernardo;  Li, Chengxin; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/08/05
3-dof Coupled Bulk Acoustic Wave (Baw) Resonators  Mass Sensor  Mode Localization  Operation In Liquid  Quality Factor  
Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology Journal article
Fan, Yutong, Zhang, Weihang, Liu, Zhihong, Zhao, Shenglei, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology[J]. IEEE Transactions on Electron Devices, 2024.
Authors:  Fan, Yutong;  Zhang, Weihang;  Liu, Zhihong;  Zhao, Shenglei;  Jiang, Yang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/05/16
Cmos  Gallium Nitride (Gan)  Inverter  Monolithic Heterogeneous Integration  Si  Wafer-scale  
Self-Powered Implantable CMOS Photovoltaic Cell With 18.6% Efficiency Journal article
Zhao, Jinwei, Parvizi, Roghaieh, Ghannam, Rami, Law, Man Kay, Walton, Finlay, Imran, Muhammad Ali, Heidari, Hadi. Self-Powered Implantable CMOS Photovoltaic Cell With 18.6% Efficiency[J]. IEEE Transactions on Electron Devices, 2023, 70(6), 3149-3154.
Authors:  Zhao, Jinwei;  Parvizi, Roghaieh;  Ghannam, Rami;  Law, Man Kay;  Walton, Finlay; et al.
Favorite | TC[WOS]:6 TC[Scopus]:7  IF:2.9/2.9 | Submit date：2023/07/19
Cmos  Efficiency  Energy Autonomous  Human Skin  Implantable Device  Photovoltaic (Pv) Cell  
Organic Light-Emitting Diodes Array with High-Luminance Stability and Low-Lateral Leakage by Hybridized Plasma Treatments Journal article
Xiong, Zhiyong, Cui, Zhongjie, Wen, Zhuoqi, Hu, Zhe, Mei, Shiliang, Wang, Jing, Zhang, Wanlu, Xie, Fengxian, Guo, Ruiqian. Organic Light-Emitting Diodes Array with High-Luminance Stability and Low-Lateral Leakage by Hybridized Plasma Treatments[J]. IEEE Transactions on Electron Devices, 2022, 69(3), 1107-1114.
Authors:  Xiong, Zhiyong;  Cui, Zhongjie;  Wen, Zhuoqi;  Hu, Zhe;  Mei, Shiliang; et al.
Favorite | TC[WOS]:2 TC[Scopus]:4  IF:2.9/2.9 | Submit date：2022/03/28
Lateral Leakage  Luminance Stability  Organic Light-emitting Diodes (Oleds)  Plasma  
An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction Journal article
Kong, Moufu, Huang, Ke, Guo, Jiaxin, Zhang, Bingke, Wu, Huanjie, Liu, Cong, Wang, Bin. An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68(8), 4022-4027.
Authors:  Kong, Moufu;  Huang, Ke;  Guo, Jiaxin;  Zhang, Bingke;  Wu, Huanjie; et al.
Favorite | TC[WOS]:5 TC[Scopus]:5  IF:2.9/2.9 | Submit date：2021/12/08
Accumulation Layer  Reverse Recovery  Schottky Barrier Diode  Split-gate (Sg)  Trench Mosfet  
A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS Journal article
Lu, X., Law, M. K., Jiang, Y., Zhao, X., Mak, P. I., Martins, R. P.. A 4μm Diameter SPAD Using Less-doped N-Well Guard Ring in Baseline 65nm CMOS[J]. IEEE Transactions on Electron Devices, 2020, 2223-2225.
Authors:  Lu, X.;  Law, M. K.;  Jiang, Y.;  Zhao, X.;  Mak, P. I.; et al.
Favorite |   IF:2.9/2.9 | Submit date：2022/01/25
Baseline CMOS  Premature Lateral Break-Down  Single-Photon Avalanche Diode (SPAD)  Small Pitch  
A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS Journal article
Lu,Xin, Law,Man Kay, Jiang,Yang, Zhao,Xiaojin, Mak,Pui In, Martins,Rui P.. A 4-μm diameter SPAD using less-doped N-Well guard ring in baseline 65-nm CMOS[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67(5), 2223-2225.
Authors:  Lu,Xin;  Law,Man Kay;  Jiang,Yang;  Zhao,Xiaojin;  Mak,Pui In; et al.
Favorite | TC[WOS]:14 TC[Scopus]:16  IF:2.9/2.9 | Submit date：2021/03/04
Baseline Cmos  Premature Lateral Breakdown  Single-photon Avalanche Diode (Spad)  Small Pitch  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:24 TC[Scopus]:28  IF:2.9/2.9 | Submit date：2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2  
A precision CMOS voltage reference exploiting silicon bandgap narrowing effect Journal article
Wang B., Law M.K., Bermak A.. A precision CMOS voltage reference exploiting silicon bandgap narrowing effect[J]. IEEE Transactions on Electron Devices, 2015, 62(7), 2128-2135.
Authors:  Wang B.;  Law M.K.;  Bermak A.
Favorite | TC[WOS]:23 TC[Scopus]:27 | Submit date：2019/02/14
Bandgap Narrowing (Bgn)  Bipolar Junction Transistor (Bjt) Curvature Reduction  Bjt Noise  Cmos Bandgap Voltage Reference (Bgr)  Curvature Correction  Process Spread  Temperature Coefficient (Tc)