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Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors Conference paper
Wei Z.P., Yao B., Li Y.F., Shen D.Z., Lu Y.M., Zhang Z.Z., Li B.H., Zheng C.J., Wang X.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of p-type nitrogen-doped MgZnO by depressing N-related donors[C], 2008, 3043-3046.
Authors:  Wei Z.P.;  Yao B.;  Li Y.F.;  Shen D.Z.;  Lu Y.M.; et al.
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N doping  P-MBE  ZnMgO/ZnO p-n junction  
Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire Conference paper
Wei Z.P., Lu Y.M., Shen D.Z., Zhang Z.Z., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Fan X.W., Tang Z.K.. Fabrication of nitrogen doped p-ZnO and ZnO light-emitting diodes on sapphire[C], 2008, 3038-3042.
Authors:  Wei Z.P.;  Lu Y.M.;  Shen D.Z.;  Zhang Z.Z.;  Yao B.; et al.
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Electroluminescence  LED  P-MBE  P-type ZnO  
Microscopic origin of relaxor ferroelectricity in PMN and PLZT Journal article
Egami T., Teslic S., Dmowski W., Davies P.K., Chen I.-W., Chen H.. Microscopic origin of relaxor ferroelectricity in PMN and PLZT[J]. Journal of the Korean Physical Society, 1998, 32(3 SUPPL.).
Authors:  Egami T.;  Teslic S.;  Dmowski W.;  Davies P.K.;  Chen I.-W.; et al.
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