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Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
Ng K.W., Ko W.S., Chen R., Lu F., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon[J]. ACS Applied Materials and Interfaces, 2014, 6(19), 16706-16711.
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Alloy Ordering  Core-shell  Iii-v Nanopillar  Laser  Nanowire  
Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon Journal article
Tran T.-T.D., Chen R., Ng K.W., Ko W.S., Lu F., Chang-Hasnain C.J.. Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon[J]. Applied Physics Letters, 2014, 105(11).
Authors:  Tran T.-T.D.;  Chen R.;  Ng K.W.;  Ko W.S.;  Lu F.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08
Metastable growth of pure wurtzite InGaAs microstructures Journal article
Ng K.W., Ko W.S., Lu F., Chang-Hasnain C.J.. Metastable growth of pure wurtzite InGaAs microstructures[J]. Nano Letters, 2014, 14(8), 4757-4762.
Authors:  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
Favorite | TC[WOS]:14 TC[Scopus]:16 | Submit date：2019/04/08
Core-shell  Iii-v  Nanowire  Phase Purity  Wurtzite  
Nanopillar lasers directly grown on silicon with heterostructure surface passivation Journal article
Sun H., Ren F., Ng K.W., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Nanopillar lasers directly grown on silicon with heterostructure surface passivation[J]. ACS Nano, 2014, 8(7), 6833-6839.
Authors:  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Li K.; et al.
Favorite | TC[WOS]:26 TC[Scopus]:27 | Submit date：2019/04/08
Core-shell  Iii-v Compound On Si  Lasers  Nanopillars  Nanowires  Surface Passivation  
High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV Journal article
Tran T.-T.D., Sun H., Ng K.W., Ren F., Li K., Lu F., Yablonovitch E., Chang-Hasnain C.J.. High brightness InP micropillars grown on silicon with fermi level splitting larger than 1 eV[J]. Nano Letters, 2014, 14(6), 3235-3240.
Authors:  Tran T.-T.D.;  Sun H.;  Ng K.W.;  Ren F.;  Li K.; et al.
Favorite | TC[WOS]:18 TC[Scopus]:19 | Submit date：2019/04/08
Iii-v On Si  Micropillars  Nanowires  Photoluminescence  Photovoltaics  Solar Cells  
Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon Journal article
Li K., Sun H., Ren F., Ng K.W., Tran T.-T.D., Chen R., Chang-Hasnain C.J.. Tailoring the optical characteristics of microsized InP nanoneedles directly grown on silicon[J]. Nano Letters, 2014, 14(1), 183-190.
Authors:  Li K.;  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:43 TC[Scopus]:45 | Submit date：2019/04/08
Inp Nanowire  Nanolaser  Photovoltaics  Silicon  Type-ii  Wurtzite  
Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy Journal article
Wang X., Zardo I., Spirkoska D., Yazji S., Ng K.W., Ko W.S., Chang-Hasnain C.J., Finley J.J., Abstreiter G.. Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy[J]. ACS Nano, 2014, 8(11), 11440-11446.
Authors:  Wang X.;  Zardo I.;  Spirkoska D.;  Yazji S.;  Ng K.W.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Band Structure  Ingaas Nanoneedle  Photoluminescence Excitation Spectroscopy  Raman Spectroscopy  Wurtzite  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Ng K.W., Tran T.-T.D., Ko W.S., Chen R., Lu F., Chang-Hasnain C.J.. Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit[J]. Nano Letters, 2013, 13(12), 5931-5937.
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.; et al.
Favorite | TC[WOS]:18 TC[Scopus]:18 | Submit date：2019/04/08
Gaas Nanopillar  Gaas Nanowire  Nanolaser  Poly-si  Silicon  
High quality InGaP micropillars directly grown on silicon Conference paper
Sun H., Ren F., Tran T., Ng K.W., Li K., Chang-Hasnain C.J.. High quality InGaP micropillars directly grown on silicon[C], 2013, 50-51.
Authors:  Sun H.;  Ren F.;  Tran T.;  Ng K.W.;  Li K.; et al.
Favorite | TC[WOS]:0 TC[Scopus]:2 | Submit date：2019/04/08
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
Ng K.W., Ko W.S., Tran T.-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J.. Unconventional growth mechanism for monolithic integration of III-V on silicon[J]. ACS Nano, 2013, 7(1), 100-107.
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:59 | Submit date：2019/04/08
Critical Thickness  Iii-v On Si  Laser  Nanoneedle  Nanopillar  Nanowire  Transmission Electron Microscopy