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GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates Journal article
Sengupta D.K., Fang W., Malin J.I., Li J., Horton T., Curtis A.P., Hsieh K.C., Chuang S.L., Chen H., Feng M., Stillman G.E., Li L., Liu H.C., Bandara K.M.S.V., Gunapala S.D., Wang W.I.. GaAs/AlGaAs quantum-well infrared photodetectors on GaAs-on-Si substrates[J]. Applied Physics Letters, 1997, 71(1), 78-80.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Li J.;  Horton T.; et al.
Favorite | TC[WOS]:12 TC[Scopus]:11 | Submit date：2019/04/08
Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Kuo H.C., Thomas S., Curtis A.P., Stillman G.E., Lin C.H., Chen H.. Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy[C], 1997, 153-158.
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.; et al.
Favorite |  | Submit date：2019/04/08
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Yang Q., Hartmann Q.J., Curtis A.P., Lin C., Ahmari D.A., Scott D., Kuo H.C., Chen H., Stillman G.E.. Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD[C], 1997, 95-98.
Authors:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.; et al.
Favorite | TC[WOS]:0 TC[Scopus]:1 | Submit date：2019/04/08
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Kuo H.C., Moy A., Miller J., Hsieh K.C., Cheng K.Y., Chen H., Adesida I., Chuang S.L., Feng M., Stillman G.E., Wu W., Tucker J., Chang Y.C., Li L., Liu H.C.. Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells[J]. Journal of Electronic Materials, 1997, 26(12), 1382-1388.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:1 TC[Scopus]:1 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Mbe)  Ingaas/inp  Quantum Well Infrared Photodetectors Qwips  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift