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High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process Journal article
Hu G.C., Shan C.X., Zhang N., Jiang M.M., Wang S.P., Shen D.Z.. High gain Ga2O3 solar-blind photodetectors realized via a carrier multiplication process[J]. OPTICS EXPRESS, 2015, 23(10), 13554-13561.
Authors:  Hu G.C.;  Shan C.X.;  Zhang N.;  Jiang M.M.;  Wang S.P.; et al.
Favorite | TC[WOS]:158 TC[Scopus]:168  IF:3.2/3.4 | Submit date：2019/04/08
ZnO-based ultraviolet avalanche photodetectors Journal article
Yu J., Shan C.X., Huang X.M., Zhang X.W., Wang S.P., Shen D.Z.. ZnO-based ultraviolet avalanche photodetectors[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46(30).
Authors:  Yu J.;  Shan C.X.;  Huang X.M.;  Zhang X.W.;  Wang S.P.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:56  IF:3.1/3.0 | Submit date：2019/04/08
Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer Journal article
Xie X.H., Zhang Z.Z., Li B.H., Wang S.P., Jiang M.M., Shan C.X., Zhao D.X., Chen H.Y., Shen D.Z.. Mott-type MgxZn1-xO-based visible-blind ultraviolet photodetectors with active anti-reflection layer[J]. APPLIED PHYSICS LETTERS, 2013, 102(23).
Authors:  Xie X.H.;  Zhang Z.Z.;  Li B.H.;  Wang S.P.;  Jiang M.M.; et al.
Favorite | TC[WOS]:27 TC[Scopus]:27  IF:3.5/3.5 | Submit date：2019/04/08
P-type conductivity in N-doped ZnO: The role of the N Zn-V O complex Journal article
Liu L., Xu J., Wang D., Jiang M., Wang S., Li B., Zhang Z., Zhao D., Shan C.-X., Yao B., Shen D.Z.. P-type conductivity in N-doped ZnO: The role of the N Zn-V O complex[J]. PHYSICAL REVIEW LETTERS, 2012, 108(21).
Authors:  Liu L.;  Xu J.;  Wang D.;  Jiang M.;  Wang S.; et al.
Favorite | TC[WOS]:150 TC[Scopus]:165  IF:8.1/8.3 | Submit date：2019/04/08
Degenerated MgZnO films obtained by excessive zinc Journal article
Liu J.S., Shan C.X., Wang S.P., Li B.H., Zhang Z.Z., Shen D.Z.. Degenerated MgZnO films obtained by excessive zinc[J]. JOURNAL OF CRYSTAL GROWTH, 2012, 347(1), 95-98.
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang Z.Z.; et al.
Favorite | TC[WOS]:11 TC[Scopus]:11  IF:1.7/1.7 | Submit date：2019/04/08
A1. Characterization  A3. Molecular Beam Epitaxy  B2. Semiconducting Ii-vi Materials  
A route to single-crystalline ZnO films with low residual electron concentration Journal article
Liu J.S., Shan C.X., Wang S.P., Sun F., Yao B., Shen D.Z.. A route to single-crystalline ZnO films with low residual electron concentration[J]. JOURNAL OF CRYSTAL GROWTH, 2010, 312(20), 2861-2864.
Authors:  Liu J.S.;  Shan C.X.;  Wang S.P.;  Sun F.;  Yao B.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:10  IF:1.7/1.7 | Submit date：2019/04/08
A1. X-ray Diffraction  A3. Molecular Beam Epitaxy  B1. Zinc Compounds  B2. Semiconducting Ii-vi Materials  
On the origin of intrinsic donors in ZnO Journal article
Sun F., Shan C.X., Wang S.P., Li B.H., Zhang J.Y., Zhang Z.Z., Zhao D.X., Yao B., Shen D.Z., Fan X.W.. On the origin of intrinsic donors in ZnO[J]. APPLIED SURFACE SCIENCE, 2010, 256(11), 3390-3393.
Authors:  Sun F.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:22 TC[Scopus]:21  IF:6.3/5.9 | Submit date：2019/04/08
Carrier Concentration  Hall Measurement  Intrinsic Donors  Zinc Oxide  
Degenerate layer at ZnO/sapphire interface Journal article
Li L., Shan C.X., Wang S.P., Li B.H., Zhang J.Y., Yao B., Shen D.Z., Fan X.W., Lu Y.M.. Degenerate layer at ZnO/sapphire interface[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42(19).
Authors:  Li L.;  Shan C.X.;  Wang S.P.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6  IF:3.1/3.0 | Submit date：2019/04/08
A facile route to arsenic-doped p-type ZnO films Journal article
Wang S.P., Shan C.X., Li B.H., Zhang J.Y., Yao B., Shen D.Z., Fan X.W.. A facile route to arsenic-doped p-type ZnO films[J]. JOURNAL OF CRYSTAL GROWTH, 2009, 311(14), 3577-3580.
Authors:  Wang S.P.;  Shan C.X.;  Li B.H.;  Zhang J.Y.;  Yao B.; et al.
Favorite | TC[WOS]:17 TC[Scopus]:18  IF:1.7/1.7 | Submit date：2019/04/08
A1. Diffusion  A1. Doping  A3. Molecular Beam Epitaxy  B2. Semiconducting Ii-vi Materials  
Electrical and optical properties of ZnO films grown by molecular beam epitaxy Journal article
Wang S.P., Shan C.X., Yao B., Li B.H., Zhang J.Y., Zhao D.X., Shen D.Z., Fan X.W.. Electrical and optical properties of ZnO films grown by molecular beam epitaxy[J]. APPLIED SURFACE SCIENCE, 2009, 255(9), 4913-4915.
Authors:  Wang S.P.;  Shan C.X.;  Yao B.;  Li B.H.;  Zhang J.Y.; et al.
Favorite | TC[WOS]:24 TC[Scopus]:27  IF:6.3/5.9 | Submit date：2019/04/08
Grain Boundary  Hall Mobility  Molecular Beam Epitaxy  Zinc Oxide