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2016 [1]
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A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power
Journal article
Ramiah, H., Eswaran, U. R. J., Mak, P. I., Martins, R. P.. A 2-μm InGaP/GaAs Class-J Power Amplifier for Multi-band LTE Achieving 35.8-dB Gain, 40.5%-to-55.8% PAE and 28-dBm Linear Output Power[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 200-209.
Authors:
Ramiah, H.
;
Eswaran, U. R. J.
;
Mak, P. I.
;
Martins, R. P.
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TC[WOS]:
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IF:
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Submit date：2022/01/24
Class-j Power Amplifier
Multi-band Lte
