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Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer Journal article
Liu, Bingtao, Sun, Hanxi, Huan, Changmeng, Jia, Renxu, Cai, Yongqing, Ke, Qingqing. Investigating the Reliability of a Negative Capacitance Field Effect Transistor Regarding the Electric Field Across the Oxide Layer[J]. Journal of Electronic Materials, 2023, 52, 3180-3187.
Authors:  Liu, Bingtao;  Sun, Hanxi;  Huan, Changmeng;  Jia, Renxu;  Cai, Yongqing; et al.
Favorite | TC[WOS]:2 TC[Scopus]:2  IF:2.2/1.9 | Submit date：2023/06/07
Electric Field Distribution  Negative Capacitance  Oxide Reliability  Tcad