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Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon Journal article
Ko W.S., Bhattacharya I., Tran T.-T.D., Ng K.W., Adair Gerke S., Chang-Hasnain C.. Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon[J]. Scientific Reports, 2016, 6.
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.-T.D.;  Ng K.W.;  Adair Gerke S.; et al.
Favorite | TC[WOS]:28 TC[Scopus]:24 | Submit date：2019/04/08
Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
Ng K.W., Ko W.S., Chen R., Lu F., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon[J]. ACS Applied Materials and Interfaces, 2014, 6(19), 16706-16711.
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Alloy Ordering  Core-shell  Iii-v Nanopillar  Laser  Nanowire  
Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon Journal article
Tran T.-T.D., Chen R., Ng K.W., Ko W.S., Lu F., Chang-Hasnain C.J.. Three-dimensional whispering gallery modes in InGaAs nanoneedle lasers on silicon[J]. Applied Physics Letters, 2014, 105(11).
Authors:  Tran T.-T.D.;  Chen R.;  Ng K.W.;  Ko W.S.;  Lu F.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08
Metastable growth of pure wurtzite InGaAs microstructures Journal article
Ng K.W., Ko W.S., Lu F., Chang-Hasnain C.J.. Metastable growth of pure wurtzite InGaAs microstructures[J]. Nano Letters, 2014, 14(8), 4757-4762.
Authors:  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
Favorite | TC[WOS]:14 TC[Scopus]:16 | Submit date：2019/04/08
Core-shell  Iii-v  Nanowire  Phase Purity  Wurtzite  
Nanophotonic integrated circuits from nanoresonators grown on silicon Journal article
Chen R., Ng K.W., Ko W.S., Parekh D., Lu F., Tran T.-T.D., Li K., Chang-Hasnain C.. Nanophotonic integrated circuits from nanoresonators grown on silicon[J]. Nature Communications, 2014, 5.
Authors:  Chen R.;  Ng K.W.;  Ko W.S.;  Parekh D.;  Lu F.; et al.
Favorite | TC[WOS]:51 TC[Scopus]:68 | Submit date：2019/04/08
InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate Conference paper
Ko W.S., Bhattacharya I., Tran T., Ng K.W., Chang-Hasnain C.. InP nanowire avalanche photodiode and bipolar junction phototransistor integrated on silicon substrate[C], 2014.
Authors:  Ko W.S.;  Bhattacharya I.;  Tran T.;  Ng K.W.;  Chang-Hasnain C.
Favorite | TC[WOS]:2 TC[Scopus]:2 | Submit date：2019/04/08
Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy Journal article
Wang X., Zardo I., Spirkoska D., Yazji S., Ng K.W., Ko W.S., Chang-Hasnain C.J., Finley J.J., Abstreiter G.. Valence band splitting in wurtzite InGaAs nanoneedles studied by photoluminescence excitation spectroscopy[J]. ACS Nano, 2014, 8(11), 11440-11446.
Authors:  Wang X.;  Zardo I.;  Spirkoska D.;  Yazji S.;  Ng K.W.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Band Structure  Ingaas Nanoneedle  Photoluminescence Excitation Spectroscopy  Raman Spectroscopy  Wurtzite  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Ng K.W., Tran T.-T.D., Ko W.S., Chen R., Lu F., Chang-Hasnain C.J.. Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit[J]. Nano Letters, 2013, 13(12), 5931-5937.
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.; et al.
Favorite | TC[WOS]:18 TC[Scopus]:18 | Submit date：2019/04/08
Gaas Nanopillar  Gaas Nanowire  Nanolaser  Poly-si  Silicon  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
Ng K.W., Ko W.S., Tran T.-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J.. Unconventional growth mechanism for monolithic integration of III-V on silicon[J]. ACS Nano, 2013, 7(1), 100-107.
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:59 | Submit date：2019/04/08
Critical Thickness  Iii-v On Si  Laser  Nanoneedle  Nanopillar  Nanowire  Transmission Electron Microscopy  
Nanolasers grown on silicon-based MOSFETs Journal article
Lu F., Tran T.-T.D., Ko W.S., Ng K.W., Chen R., Chang-Hasnain C.. Nanolasers grown on silicon-based MOSFETs[J]. Optics Express, 2012, 20(11), 12171-12176.
Authors:  Lu F.;  Tran T.-T.D.;  Ko W.S.;  Ng K.W.;  Chen R.; et al.
Favorite | TC[WOS]:36 TC[Scopus]:44 | Submit date：2019/04/08