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Analysis of Genomes and Transcriptomes of Hepatocellular Carcinomas Identifies Mutations and Gene Expression Changes in the Transforming Growth Factor-β Pathway Journal article
Chen J., Zaidi S., Rao S., Chen J.-S., Phan L., Farci P., Su X., Shetty K., White J., Zamboni F., Wu X., Rashid A., Pattabiraman N., Mazumder R., Horvath A., Wu R.-C., Li S., Xiao C., Deng C.-X., Wheeler D.A., Mishra B., Akbani R., Mishra L.. Analysis of Genomes and Transcriptomes of Hepatocellular Carcinomas Identifies Mutations and Gene Expression Changes in the Transforming Growth Factor-β Pathway[J]. Gastroenterology, 2018, 154(1), 195-210.
Authors:  Chen J.;  Zaidi S.;  Rao S.;  Chen J.-S.;  Phan L.; et al.
Favorite | TC[WOS]:110 TC[Scopus]:112 | Submit date：2018/12/13
Cosmic  Gene Regulation  Genetics  Immune Response  Liver Cancer  
Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing Journal article
Sengupta D.K., Horton T., Fang W., Curtis A., Li J., Chuang S.L., Chen H., Feng M., Stillman G.E., Kar A., Mazumder J., Li L., Liu H.C.. Redshifting of a bound-to-continuum GaAs/AIGaAs quantum-well infrared photodetector response via laser annealing[J]. Applied Physics Letters, 1997, 70(26), 3573-3575.
Authors:  Sengupta D.K.;  Horton T.;  Fang W.;  Curtis A.;  Li J.; et al.
Favorite | TC[WOS]:12 TC[Scopus]:14 | Submit date：2019/04/08
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift