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Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe Journal article
Strite S., Chandrasekhar D., Smith D.J., Sariel J., Chen H., Teraguchi N., Morkoc H.. Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe[J]. Journal of Crystal Growth, 1993, 127(1-4), 204-208.
Authors:  Strite S.;  Chandrasekhar D.;  Smith D.J.;  Sariel J.;  Chen H.; et al.
Favorite | TC[WOS]:94 TC[Scopus]:94 | Submit date：2019/04/08
Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe Journal article
Strite S., Chandrasekhar D., Smith D.J., Sariel J., Chen H., Teraguchi N., Morkoc H.. Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytpe[J]. Journal of Crystal Growth, 1993, 127(1-4), 204-208.
Authors:  Strite S.;  Chandrasekhar D.;  Smith D.J.;  Sariel J.;  Chen H.; et al.
Favorite | TC[WOS]:94 TC[Scopus]:94 | Submit date：2019/04/08
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
Molecular beam epitaxial growth and characterization of InSb on Si Journal article
Chyi J.-I., Biswas D., Iyer S.V., Kumar N.S., Morkoc H., Bean R., Zanio K., Lee H.-Y., Chen H.. Molecular beam epitaxial growth and characterization of InSb on Si[J]. Applied Physics Letters, 1989, 54(11), 1016-1018.
Authors:  Chyi J.-I.;  Biswas D.;  Iyer S.V.;  Kumar N.S.;  Morkoc H.; et al.
Favorite | TC[WOS]:83 TC[Scopus]:80 | Submit date：2019/04/08
Molecular beam epitaxial growth and characterization of InSb on Si Journal article
Chyi J.-I., Biswas D., Iyer S.V., Kumar N.S., Morkoc H., Bean R., Zanio K., Lee H.-Y., Chen H.. Molecular beam epitaxial growth and characterization of InSb on Si[J]. Applied Physics Letters, 1989, 54(11), 1016-1018.
Authors:  Chyi J.-I.;  Biswas D.;  Iyer S.V.;  Kumar N.S.;  Morkoc H.; et al.
Favorite | TC[WOS]:83 TC[Scopus]:80 | Submit date：2019/04/08