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Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
Ng K.W., Ko W.S., Tran T.-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J.. Unconventional growth mechanism for monolithic integration of III-V on silicon[J]. ACS Nano, 2013, 7(1), 100-107.
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:59 | Submit date：2019/04/08
Critical Thickness  Iii-v On Si  Laser  Nanoneedle  Nanopillar  Nanowire  Transmission Electron Microscopy  
Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates Journal article
Dubrovskii V.G., Nazarenko M.V., Chuang L.C., Ko W.S., Ng K.W., Chang-Hasnain C.. Growth kinetics of GaAs nanoneedles on silicon and sapphire substrates[J]. Applied Physics Letters, 2011, 98(15).
Authors:  Dubrovskii V.G.;  Nazarenko M.V.;  Chuang L.C.;  Ko W.S.;  Ng K.W.; et al.
Favorite | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08