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High-performance flexible resistive random-access memory based on SnS2 quantum dots with a charge trapping/de-trapping effect Journal article
An, Hua, Li, Yiyang, Ren, Yi, Wan, Yili, Wang, Weigao, Sun, Zhenhua, Zhong, Junwen, Peng, Zhengchun. High-performance flexible resistive random-access memory based on SnS2 quantum dots with a charge trapping/de-trapping effect[J]. Nanoscale, 2024, 16(25), 12142-12148.
Authors:  An, Hua;  Li, Yiyang;  Ren, Yi;  Wan, Yili;  Wang, Weigao; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:5.8/6.1 | Submit date：2024/07/04