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34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC Conference paper
Yuan, Yiyang, Yang, Yiming, Wang, Xinghua, Li, Xiaoran, Ma, Cailian, Chen, Qirui, Tang, Meini, Wei, Xi, Hou, Zhixian, Zhu, Jialiang, Wu, Hao, Ren, Qirui, Xing, Guozhong, Mak, Pui In, Zhang, Feng. 34.6 A 28nm 72.12TFLOPS/W Hybrid-Domain Outer-Product Based Floating-Point SRAM Computing-in-Memory Macro with Logarithm Bit-Width Residual ADC[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 576-578.
Authors:  Yuan, Yiyang;  Yang, Yiming;  Wang, Xinghua;  Li, Xiaoran;  Ma, Cailian; et al.
Favorite | TC[Scopus]:2 | Submit date：2024/05/16
Training  Random Access Memory  Throughput  Common Information Model (Computing)  System-on-chip  Solid State Circuits  Complexity Theory  
Advances in oxide semiconductors for surface enhanced Raman scattering Journal article
Du, Xuejian, Liu, Di, An, Keyu, Jiang, Shouzhen, Wei, Zhixian, Wang, Shuangpeng, Ip, Weng Fai, Pan, Hui. Advances in oxide semiconductors for surface enhanced Raman scattering[J]. Applied Materials Today, 2022, 29, 101563.
Authors:  Du, Xuejian;  Liu, Di;  An, Keyu;  Jiang, Shouzhen;  Wei, Zhixian; et al.
Favorite | TC[WOS]:17 TC[Scopus]:18  IF:7.2/7.8 | Submit date：2023/01/30
Oxide Semiconductors  Sers  Enhancement Mechanism  Charge Transfer  Improvement Strategies  
Advances in oxide semiconductors for surface enhanced Raman scattering Journal article
Du, Xuejian, Liu, Di, An, Keyu, Jiang, Shouzhen, Wei, Zhixian, Wang, Shuangpeng, Ip, Weng Fai, Pan, Hui. Advances in oxide semiconductors for surface enhanced Raman scattering[J]. Applied Materials Today, 2022, 29.
Authors:  Du, Xuejian;  Liu, Di;  An, Keyu;  Jiang, Shouzhen;  Wei, Zhixian; et al.
Favorite | TC[WOS]:17 TC[Scopus]:18  IF:7.2/7.8 | Submit date：2023/08/03
Charge transfer  Enhancement mechanism  Improvement strategies  Oxide semiconductors  SERS