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Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications Conference paper
Fan, Yutong, Liu, Xi, Zhang, Weihang, Wu, Yinhe, Liu, Zhihong, Zhang, Chunfu, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications[C]:IEEE, 2024, 267-270.
Authors:  Fan, Yutong;  Liu, Xi;  Zhang, Weihang;  Wu, Yinhe;  Liu, Zhihong; et al.
Favorite | TC[WOS]:0 TC[Scopus]:1 | Submit date：2024/08/05
Breakdown Voltage  Cmos  Gan  Inverter  Logic Integrated Circuit  Monolithic Integration  Mosfet  Si  
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2 Journal article
Lu, Xing, Zhou, Xianda, Jiang, Huaxing, Ng, Kar Wei, Chen, Zimin, Pei, Yanli, Lau, Kei May, Wang, Gang. 1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes with an Ultra-Low Leakage Current below μ A/cm2[J]. IEEE Electron Device Letters, 2020, 41(3), 449-452.
Authors:  Lu, Xing;  Zhou, Xianda;  Jiang, Huaxing;  Ng, Kar Wei;  Chen, Zimin; et al.
Favorite | TC[WOS]:160 TC[Scopus]:168  IF:4.1/4.2 | Submit date：2021/09/17
Breakdown Voltage  Heterojunction  Nio  P-n Diode  Reverse Leakage Current  Β-=ga2o3