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A 5.99-GHz VCO with Wideband-Differential-Mode Second Harmonic Resonance Achieving - 138.9 dBc/Hz Phase Noise at an Offset of 10 MHz
Journal article
Yang, Chaowei, Chen, Yong, Huang, Yunbo, Martins, Rui P., Mak, Pui In. A 5.99-GHz VCO with Wideband-Differential-Mode Second Harmonic Resonance Achieving - 138.9 dBc/Hz Phase Noise at an Offset of 10 MHz[J]. IEEE Microwave and Wireless Technology Letters, 2024, 34(11), 1267-1270.
Authors:
Yang, Chaowei
;
Chen, Yong
;
Huang, Yunbo
;
Martins, Rui P.
;
Mak, Pui In
Favorite
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TC[WOS]:
0
TC[Scopus]:
0
IF:
0
/
0
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Submit date:2024/11/05
1/f3 Pn Corner
Cmos
Figure-of-merit (Fom)
Impulse Sensitivity Function (Isf)
Phase Noise (Pn)
Voltage-controlled Oscillator (Vco)
Wideband-harmonic Shaping
A 167-μW 71.7-dB SFDR 2.4-GHz BLE Receiver Using a Passive Quadrature Front End, a Double-Sided Double-Balanced Cascaded Mixer, and a Dual-Transformer-Coupled Class-D VCO
Journal article
Shao, Haijun, Martins, Rui P., Mak, Pui In. A 167-μW 71.7-dB SFDR 2.4-GHz BLE Receiver Using a Passive Quadrature Front End, a Double-Sided Double-Balanced Cascaded Mixer, and a Dual-Transformer-Coupled Class-D VCO[J]. IEEE Journal of Solid-State Circuits, 2024.
Authors:
Shao, Haijun
;
Martins, Rui P.
;
Mak, Pui In
Favorite
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TC[WOS]:
0
TC[Scopus]:
1
IF:
4.6
/
5.6
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Submit date:2024/11/05
Adjacent Channel
Bluetooth Low Energy (Ble)
Cascaded
Cmos
Double Balanced
Figure Of Merit (Fom)
Hybrid Coupler
Noise Figure (Nf)
Notching
Out Of Band (Oob)
Passive Intensive
Phase Noise (Pn)
Quadrature
Signal-to-noise Ratio (Snr)
Spurious-free Dynamic Range (Sfdr)
Ultra-low-power (Ulp)
Voltage-controlled Oscillator (Vco)
Exploring the Performance of Hall Sensor with Substrate Bias Modulation in SOI Process
Journal article
Cao, Boyang, Lei, Ka Meng, Zou, Hengchen, Martins, Rui P., Mak, Pui In. Exploring the Performance of Hall Sensor with Substrate Bias Modulation in SOI Process[J]. IEEE Sensors Journal, 2024, 24(17), 27365-27372.
Authors:
Cao, Boyang
;
Lei, Ka Meng
;
Zou, Hengchen
;
Martins, Rui P.
;
Mak, Pui In
Favorite
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TC[WOS]:
0
TC[Scopus]:
0
IF:
4.3
/
4.2
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Submit date:2024/08/05
Cmos
Cross Plate
Horizontal Hall Sensor
Substrate-biased
Area-efficient ultra-wide-tuning-range ring oscillators in 65-nm complementary metal–oxide–semiconductor
Journal article
Yang, Chaowei, Chen, Yong, Cheng, Kai, Stefano, Crovetti Paolo, Martins, Rui P., Mak, Pui In. Area-efficient ultra-wide-tuning-range ring oscillators in 65-nm complementary metal–oxide–semiconductor[J]. International Journal of Circuit Theory and Applications, 2024.
Authors:
Yang, Chaowei
;
Chen, Yong
;
Cheng, Kai
;
Stefano, Crovetti Paolo
;
Martins, Rui P.
; et al.
Favorite
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TC[WOS]:
0
TC[Scopus]:
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IF:
1.8
/
1.7
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Submit date:2024/08/05
Clock And Data Recovery (Cdr)
Cmos Figure-of-merit (Fom)
Figure-of-merit With Tuning And Area (Fomta)
Figure-of-merit With Tuning Range (Fomt)
Flicker (1/f)
Noise Noise Transfer Phase Noise (Pn)
Phase-locked Loop (Pll)
Quality Factor Switched-capacitor Array (Sca)
Thermal Noise Transformer Tuning Range (Tr)
Ultra-wide-tuning-range Voltage-controlled Oscillator (Vco)
A Fast Startup 38.4-MHz Crystal Oscillator Achieving 99-nJ Startup Energy with Adaptive Chirping
Journal article
Rahmani, Abdolraouf, Ramiah, Harikrishnan, Lei, Ka Meng, Lim, Chee Cheow, Lai, Nai Shyan, Mak, Pui In, Martins, Rui P.. A Fast Startup 38.4-MHz Crystal Oscillator Achieving 99-nJ Startup Energy with Adaptive Chirping[J]. IEEE Access, 2024, 12, 102202-102211.
Authors:
Rahmani, Abdolraouf
;
Ramiah, Harikrishnan
;
Lei, Ka Meng
;
Lim, Chee Cheow
;
Lai, Nai Shyan
; et al.
Favorite
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TC[WOS]:
0
TC[Scopus]:
0
IF:
3.4
/
3.7
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Submit date:2024/08/05
Cmos
Internet-of-things (Iot)
Crystal Oscillator (Xo)
Startup Time
Chirp Injection
Motional Current
Adaptive Chirp Injection
Energy Injection
Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications
Conference paper
Fan, Yutong, Liu, Xi, Zhang, Weihang, Wu, Yinhe, Liu, Zhihong, Zhang, Chunfu, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications[C]:IEEE, 2024, 267-270.
Authors:
Fan, Yutong
;
Liu, Xi
;
Zhang, Weihang
;
Wu, Yinhe
;
Liu, Zhihong
; et al.
Favorite
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TC[WOS]:
0
TC[Scopus]:
1
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Submit date:2024/08/05
Breakdown Voltage
Cmos
Gan
Inverter
Logic Integrated Circuit
Monolithic Integration
Mosfet
Si
A Switchless Dual-core Triple-Mode VCO Achieving 7.1-to-15.7 GHz Frequency Tuning Range and 202.1 dBc/Hz Peak FoM at 3.7 Kelvin
Conference paper
Yue Wu#,, PENG YATAO, Benhao Huo, Jun Yin, Rui P. Martins, Pui In Mak. A Switchless Dual-core Triple-Mode VCO Achieving 7.1-to-15.7 GHz Frequency Tuning Range and 202.1 dBc/Hz Peak FoM at 3.7 Kelvin[C]:Institute of Electrical and Electronics Engineers Inc., 2024, 243 - 246.
Authors:
Yue Wu#,
;
PENG YATAO
;
Benhao Huo
;
Jun Yin
;
Rui P. Martins
; et al.
Adobe PDF
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Favorite
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TC[WOS]:
0
TC[Scopus]:
0
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Submit date:2024/07/08
Cryogenic Cmos
Frequency Tuning Range
Mode-switching
Quantum Interface
Switch-less
Vco
A 521pW, 0.016%/V Line Sensitivity Self-Biased CMOS Voltage Reference With DIBL Effect Compensation Using Adaptive VGS Control
Journal article
Yu, Kai, Yang, Shangru, Li, Sizhen, Huang, Mo. A 521pW, 0.016%/V Line Sensitivity Self-Biased CMOS Voltage Reference With DIBL Effect Compensation Using Adaptive VGS Control[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71(4), 1754-1758.
Authors:
Yu, Kai
;
Yang, Shangru
;
Li, Sizhen
;
Huang, Mo
Favorite
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TC[WOS]:
1
TC[Scopus]:
1
IF:
4.0
/
3.7
|
Submit date:2024/05/02
Cmos Voltage Reference
Dibl Effect Compensation
Line Sensitivity
Power Supply Rejection Ratio
Self-biased
Ultra-low Power
Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology
Journal article
Fan, Yutong, Zhang, Weihang, Liu, Zhihong, Zhao, Shenglei, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology[J]. IEEE Transactions on Electron Devices, 2024.
Authors:
Fan, Yutong
;
Zhang, Weihang
;
Liu, Zhihong
;
Zhao, Shenglei
;
Jiang, Yang
; et al.
Favorite
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TC[WOS]:
0
TC[Scopus]:
0
IF:
2.9
/
2.9
|
Submit date:2024/05/16
Cmos
Gallium Nitride (Gan)
Inverter
Monolithic Heterogeneous Integration
Si
Wafer-scale
A 0.011%/V LS and −76-dB PSRR Self-Biased CMOS Voltage Reference With Quasi Self-Cascode Current Mirror
Journal article
Yu, Kai, Chen, Jiyang, Li, Sizhen, Huang, Mo. A 0.011%/V LS and −76-dB PSRR Self-Biased CMOS Voltage Reference With Quasi Self-Cascode Current Mirror[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2024, 71(3), 1052-1056.
Authors:
Yu, Kai
;
Chen, Jiyang
;
Li, Sizhen
;
Huang, Mo
Favorite
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TC[WOS]:
0
TC[Scopus]:
0
IF:
4.0
/
3.7
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Submit date:2024/02/22
Cmos Voltage Reference
Line Sensitivity
Power Supply Rejection Ratio
Quasi Self-cascode Current Mirror
Self-biased