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An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  ; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction