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Optimal Sizing of Isolated Renewable Power Systems with Ammonia Synthesis: Model and Solution Approach Journal article
Yu, Zhipeng, Lin, Jin, Liu, Feng, Li, Jiarong, Zhao, Yuxuan, Song, Yonghua. Optimal Sizing of Isolated Renewable Power Systems with Ammonia Synthesis: Model and Solution Approach[J]. IEEE Transactions on Power Systems, 2024, 39(5), 1-14.
Authors:  Yu, Zhipeng;  Lin, Jin;  Liu, Feng;  Li, Jiarong;  Zhao, Yuxuan; et al.
Favorite | TC[WOS]:2 TC[Scopus]:4  IF:6.5/7.4 | Submit date：2024/05/16
Ammonia  Combined c&c And b&b Algorithm  Costs  Hydrogen  Information Gap Decision Theory(Igdt)  Investment  Isolated Renewable Power To Ammonia (Irepta)  Mixed-integer Linear Fractional Programming (Milfp)  Planning  Renewable Energy Sources  Uncertainty  
Stabilization of BeZnO alloy by S incorporation: A density functional theory investigation Journal article
Mingming Chen, Dingyu Yong, Chunxia Wu, Zhen Shen, Anqi Chen, Yuan Zhu, Bicai Pan, Zikang Tang. Stabilization of BeZnO alloy by S incorporation: A density functional theory investigation[J]. Journal of Alloys and Compounds, 2015, 658, 636-641.
Authors:  Mingming Chen;  Dingyu Yong;  Chunxia Wu;  Zhen Shen;  Anqi Chen; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Beznos  Formation Energy  Band-gap Engineering  Density Functional Theory  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction  
An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Journal article
Strite S., Ruan J., Li Z., Salvador A., Chen H., Smith D.J., Choyke W.J., Morkoc H.. An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1991, 9(4), 1924-1929.
Authors:  Strite S.;  Ruan J.;  Li Z.;  Salvador A.;  Chen H.; et al.
Favorite | TC[WOS]:333 TC[Scopus]:334 | Submit date：2019/04/08
Cathodoluminescence  Crystal Structure  Energy Gap  Films  Gallium Arsenides  Gallium Nitrides  Layers  Medium Temperature  Molecular Beam Epitaxy  Optical Properties  Transmission Electron Microscopy  X-ray Diffraction