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Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology Journal article
Fan, Yutong, Zhang, Weihang, Liu, Zhihong, Zhao, Shenglei, Jiang, Yang, Mak, Pui In, Hao, Yue, Zhang, Jincheng. Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology[J]. IEEE Transactions on Electron Devices, 2024.
Authors:  Fan, Yutong;  Zhang, Weihang;  Liu, Zhihong;  Zhao, Shenglei;  Jiang, Yang; et al.
Favorite | TC[WOS]:0 TC[Scopus]:0  IF:2.9/2.9 | Submit date：2024/05/16
Cmos  Gallium Nitride (Gan)  Inverter  Monolithic Heterogeneous Integration  Si  Wafer-scale  
A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique Journal article
Yujia, Wang, Jincheng, Zhang, Yong, Chen, Junyan, Ren, Shunli, Ma. A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023, 31(2), 233-242.
Authors:  Yujia, Wang;  Jincheng, Zhang;  Yong, Chen;  Junyan, Ren;  Shunli, Ma
Favorite | TC[WOS]:2 TC[Scopus]:5  IF:2.8/2.8 | Submit date：2023/01/30
Chebyshev Matching Technique  Gallium Nitride (Gan)  Power Added Efficiency (Pae)  Power Amplifier (Pa)  Satellite Communication  Wideband Matching Network  
A Reconfigurable Single-Stage Asymmetrical Full-Wave Step-Down Rectifier for Bidirectional Device-to-Device Wireless Fast Charging Journal article
Mao, Fangyu, Lu, Yan, Martins, Rui P.. A Reconfigurable Single-Stage Asymmetrical Full-Wave Step-Down Rectifier for Bidirectional Device-to-Device Wireless Fast Charging[J]. IEEE Journal of Solid-State Circuits, 2022, 57(6), 1888-1898.
Authors:  Mao, Fangyu;  Lu, Yan;  Martins, Rui P.
Favorite | TC[WOS]:2 TC[Scopus]:4  IF:4.6/5.6 | Submit date：2022/05/17
Device-to-device (D2d) Wireless Charging  Gallium-nitride (Gan)  Reconfigurable Controller  Single-stage Structure  Step-down Rectifier (Sdr)  Step-up Power Amplifier (Supa)  Zero-voltage Switching (Zvs)  
Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications Journal article
Zhao,Liyun, Gao,Yan, Su,Man, Shang,Qiuyu, Liu,Zhen, Li,Qi, Wei,Qi, Li,Meili, Fu,Lei, Zhong,Yangguang, Shi,Jia, Chen,Jie, Zhao,Yue, Qiu,Xiaohui, Liu,Xinfeng, Tang,Ning, Xing,Guichuan, Wang,Xina, Shen,Bo, Zhang,Qing. Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications[J]. ACS Nano, 2019, 13(9), 10085-10094.
Authors:  Zhao,Liyun;  Gao,Yan;  Su,Man;  Shang,Qiuyu;  Liu,Zhen; et al.
Favorite | TC[WOS]:67 TC[Scopus]:69  IF:15.8/16.2 | Submit date：2021/03/11
Cesium Lead Bromide  Gallium Nitride  Incommensurate Epitaxy  Lasing  Perovskite  Vapor-phase Deposition