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Wafer-Scale PLD-Grown High-κ GCZO Dielectrics for 2D Electronics Journal article
Yu, Jing, Gao, Guoyun, Han, Wei, Wei, Changting, Wang, Yueyang, Lin, Tianxiang, Zhang, Tianyu, Zheng, Zhi, Ki, Dong Keun, Zhang, Hongyuan, Ng, Man Ho, Liu, Hang, Wang, Shuangpeng, Wang, Hao, Ling, Francis Chi Chung. Wafer-Scale PLD-Grown High-κ GCZO Dielectrics for 2D Electronics[J]. Advanced Electronic Materials, 2022, 8(12), 2200580.
Authors:  Yu, Jing;  Gao, Guoyun;  Han, Wei;  Wei, Changting;  Wang, Yueyang; et al.
Favorite | TC[WOS]:2 TC[Scopus]:1  IF:5.3/6.6 | Submit date:2023/01/30
2d Materials  Field-effect Transistors (Fets)  Gczo  High-κ Gate Dielectric  Sns2  
High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric Journal article
Jiang, Huaxing, Liu, Chao, Ng, Kar Wei, Tang, Chak Wah, Lau, Kei May. High-Performance AlGaN/GaN/Si Power MOSHEMTs With ZrO2 Gate Dielectric[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65(12), 5337-5342.
Authors:  Jiang, Huaxing;  Liu, Chao;  Ng, Kar Wei;  Tang, Chak Wah;  Lau, Kei May
Favorite | TC[WOS]:23 TC[Scopus]:27  IF:2.9/2.9 | Submit date:2019/01/17
Iii-nitride  Gate Dielectric  Leakage  Metal-oxide-semiconductor High Electron Mobility Transistors (Moshemts)  Power  Zro2