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InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands Journal article
Han, Yu, Li, Qiang, Ng, Kar Wei, Zhu, Si, Lau, Kei May. InGaAs/InP quantum wires grown on silicon with adjustable emission wavelength at telecom bands[J]. NANOTECHNOLOGY, 2018, 29(22).
Authors:  Han, Yu;  Li, Qiang;  Ng, Kar Wei;  Zhu, Si;  Lau, Kei May
Favorite | TC[WOS]:30 TC[Scopus]:32  IF:2.9/2.8 | Submit date：2018/10/30
Inp Nano-ridges  Iii-v On Si  Si Photonics  Ingaas Quantum Wires  
Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
Deshpande S., Bhattacharya I., Malheiros-Silveira G., Ng K.W., Schuster F., Mantei W., Cook K., Chang-Hasnain C.. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J]. ACS Photonics, 2017, 4(3), 695-702.
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:29 | Submit date：2019/04/08
Iii−v  Inp  Leds  Mocvd Growth  Nanowire Laser  Nanowire/nanopillar  Photonic Integrated Circuit  Quantum-well  Silicon Photonics  
Comparative study on beryllium and magnesium as a co-doping element for ZnO:N Journal article
Yu-Quan Su(苏宇泉), Ming-Ming Chen(陈明明), Long-Xing Su(苏龙兴), Yuan Zhu(祝渊), Zi-Kang Tang(汤子康). Comparative study on beryllium and magnesium as a co-doping element for ZnO:N[J]. Chinese Physics B, 2016, 25(6).
Authors:  Yu-Quan Su(苏宇泉);  Ming-Ming Chen(陈明明);  Long-Xing Su(苏龙兴);  Yuan Zhu(祝渊);  Zi-Kang Tang(汤子康)
Favorite | TC[WOS]:6 TC[Scopus]:6 | Submit date：2019/04/08
Defects And Impurities  Iii-v And Ii-vi Semiconductors  Photoluminescence  Properties And Materials  X-ray Photoelectron  
Orderly array of in-plane GaAs nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films Conference paper
Li , Q, Ng, K. W., Lau, K. M.. Orderly array of in-plane GaAs nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films[C], 2015.
Authors:  Li , Q;  Ng, K. W.;  Lau, K. M.
Favorite |  | Submit date：2022/08/01
III-V on silicon  aspect ratio trapping  planar nanowires  thin films  
Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films Conference paper
Li Q., Ng K.W., Lau K.M.. Orderly array of in-plane gaas nanowires on exact (001) silicon for antiphase-domain-free GaAs thin films[C], 2015, 71-74.
Authors:  Li Q.;  Ng K.W.;  Lau K.M.
Favorite |  | Submit date：2019/04/08
Aspect ratio trapping  III-V on silicon  Planar nanowires  Thin films  
Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays Journal article
Li Q., Ng K.W., Tang C.W., Lau K.M., Hill R., Vert A.. Defect reduction in epitaxial InP on nanostructured Si (001) substrates with position-controlled seed arrays[J]. Journal of Crystal Growth, 2014, 405, 81-86.
Authors:  Li Q.;  Ng K.W.;  Tang C.W.;  Lau K.M.;  Hill R.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:26 | Submit date：2019/04/08
A1. Defects  A3. Metal-organic Chemical Vapor Deposition  B1. Nanomaterials  B2. Semiconducting Iii-v Materials  B2. Semiconducting Indium Phosphide  
Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
Ng K.W., Ko W.S., Chen R., Lu F., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon[J]. ACS Applied Materials and Interfaces, 2014, 6(19), 16706-16711.
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Alloy Ordering  Core-shell  Iii-v Nanopillar  Laser  Nanowire  
Composition Homogeneity in InGaAs/GaAs Core–Shell Nanopillars Monolithically Grown on Silicon Journal article
Ng, K. W., Ko, W. S., Chen, R, Lu, F, Tran, T. T. D., Li, K, Chang-Hasnain, C. J.. Composition Homogeneity in InGaAs/GaAs Core–Shell Nanopillars Monolithically Grown on Silicon[J]. ACS Applied materials and interfaces, 2014, 16706-16711.
Authors:  Ng, K. W.;  Ko, W. S.;  Chen, R;  Lu, F;  Tran, T. T. D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2022/07/27
Alloy Ordering  Core−shell  Iii−v Nanopillar  Laser  Nanowire  
Metastable growth of pure wurtzite InGaAs microstructures Journal article
Ng K.W., Ko W.S., Lu F., Chang-Hasnain C.J.. Metastable growth of pure wurtzite InGaAs microstructures[J]. Nano Letters, 2014, 14(8), 4757-4762.
Authors:  Ng K.W.;  Ko W.S.;  Lu F.;  Chang-Hasnain C.J.
Favorite | TC[WOS]:14 TC[Scopus]:16 | Submit date：2019/04/08
Core-shell  Iii-v  Nanowire  Phase Purity  Wurtzite  
Nanopillar lasers directly grown on silicon with heterostructure surface passivation Journal article
Sun H., Ren F., Ng K.W., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Nanopillar lasers directly grown on silicon with heterostructure surface passivation[J]. ACS Nano, 2014, 8(7), 6833-6839.
Authors:  Sun H.;  Ren F.;  Ng K.W.;  Tran T.-T.D.;  Li K.; et al.
Favorite | TC[WOS]:26 TC[Scopus]:27 | Submit date：2019/04/08
Core-shell  Iii-v Compound On Si  Lasers  Nanopillars  Nanowires  Surface Passivation