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Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths Journal article
Deshpande S., Bhattacharya I., Malheiros-Silveira G., Ng K.W., Schuster F., Mantei W., Cook K., Chang-Hasnain C.. Ultracompact Position-Controlled InP Nanopillar LEDs on Silicon with Bright Electroluminescence at Telecommunication Wavelengths[J]. ACS Photonics, 2017, 4(3), 695-702.
Authors:  Deshpande S.;  Bhattacharya I.;  Malheiros-Silveira G.;  Ng K.W.;  Schuster F.; et al.
Favorite | TC[WOS]:23 TC[Scopus]:29 | Submit date：2019/04/08
Iii−v  Inp  Leds  Mocvd Growth  Nanowire Laser  Nanowire/nanopillar  Photonic Integrated Circuit  Quantum-well  Silicon Photonics  
Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon Journal article
Ng K.W., Ko W.S., Chen R., Lu F., Tran T.-T.D., Li K., Chang-Hasnain C.J.. Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon[J]. ACS Applied Materials and Interfaces, 2014, 6(19), 16706-16711.
Authors:  Ng K.W.;  Ko W.S.;  Chen R.;  Lu F.;  Tran T.-T.D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2019/04/08
Alloy Ordering  Core-shell  Iii-v Nanopillar  Laser  Nanowire  
Composition Homogeneity in InGaAs/GaAs Core–Shell Nanopillars Monolithically Grown on Silicon Journal article
Ng, K. W., Ko, W. S., Chen, R, Lu, F, Tran, T. T. D., Li, K, Chang-Hasnain, C. J.. Composition Homogeneity in InGaAs/GaAs Core–Shell Nanopillars Monolithically Grown on Silicon[J]. ACS Applied materials and interfaces, 2014, 16706-16711.
Authors:  Ng, K. W.;  Ko, W. S.;  Chen, R;  Lu, F;  Tran, T. T. D.; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9 | Submit date：2022/07/27
Alloy Ordering  Core−shell  Iii−v Nanopillar  Laser  Nanowire  
Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit Journal article
Ng K.W., Tran T.-T.D., Ko W.S., Chen R., Lu F., Chang-Hasnain C.J.. Single crystalline InGaAs nanopillar grown on polysilicon with dimensions beyond the substrate grain size limit[J]. Nano Letters, 2013, 13(12), 5931-5937.
Authors:  Ng K.W.;  Tran T.-T.D.;  Ko W.S.;  Chen R.;  Lu F.; et al.
Favorite | TC[WOS]:18 TC[Scopus]:18 | Submit date：2019/04/08
Gaas Nanopillar  Gaas Nanowire  Nanolaser  Poly-si  Silicon  
Unconventional growth mechanism for monolithic integration of III-V on silicon Journal article
Ng K.W., Ko W.S., Tran T.-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J.. Unconventional growth mechanism for monolithic integration of III-V on silicon[J]. ACS Nano, 2013, 7(1), 100-107.
Authors:  Ng K.W.;  Ko W.S.;  Tran T.-T.D.;  Chen R.;  Nazarenko M.V.; et al.
Favorite | TC[WOS]:53 TC[Scopus]:59 | Submit date：2019/04/08
Critical Thickness  Iii-v On Si  Laser  Nanoneedle  Nanopillar  Nanowire  Transmission Electron Microscopy