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A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique Journal article
Yujia, Wang, Jincheng, Zhang, Yong, Chen, Junyan, Ren, Shunli, Ma. A 4.5-W, 18.5–24.5-GHz GaN Power Amplifier Employing Chebyshev Matching Technique[J]. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2023, 31(2), 233-242.
Authors:  Yujia, Wang;  Jincheng, Zhang;  Yong, Chen;  Junyan, Ren;  Shunli, Ma
Favorite | TC[WOS]:2 TC[Scopus]:5  IF:2.8/2.8 | Submit date：2023/01/30
Chebyshev Matching Technique  Gallium Nitride (Gan)  Power Added Efficiency (Pae)  Power Amplifier (Pa)  Satellite Communication  Wideband Matching Network  
A 1.7-to-2.7GHz 35-38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-distorter (DAAPD) Reconfigurable Linearization Technique Journal article
Mariappan, Selvakumar, Rajendran, Jagadheswaran, Chen, Yong, Mak, Pui In, Martins, Rui P.. A 1.7-to-2.7GHz 35-38% PAE Multiband CMOS Power Amplifier Employing a Digitally-Assisted Analog Pre-distorter (DAAPD) Reconfigurable Linearization Technique[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2021, 68(11), 3381-3385.
Authors:  Mariappan, Selvakumar;  Rajendran, Jagadheswaran;  Chen, Yong;  Mak, Pui In;  Martins, Rui P.
Favorite | TC[WOS]:9 TC[Scopus]:10  IF:4.0/3.7 | Submit date：2021/09/20
Power Amplifier (Pa)  Cmos  Digitally-assisted Analog Predistorter (Daapd)  Back-off Output Power (Pbo)  Adjacent Channel Leakage Ratio (Aclr) And Error Vector Magnitude (Evm)  Power-added Efficiency (Pae)  Long-term Evolution (Lte)  
A High-Voltage-Enabled Class-D Polar PA Using Interactive AM-AM Modulation, Dynamic Matching, and Power-Gating for Average PAE Enhancement Journal article
Yu, Wei-Han, Peng, Xingqiang, Mak, Pui-In, Martins, Rui P.. A High-Voltage-Enabled Class-D Polar PA Using Interactive AM-AM Modulation, Dynamic Matching, and Power-Gating for Average PAE Enhancement[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2017, 64(11), 2844-2857.
Authors:  Yu, Wei-Han;  Peng, Xingqiang;  Mak, Pui-In;  Martins, Rui P.
Favorite | TC[WOS]:5 TC[Scopus]:5  IF:5.2/4.5 | Submit date：2018/10/30
Aa Battery  Antenna Impedance Mismatch  Class-d  Cmos  Digital Am Modulation  Dynamic Matching Network (Dmn)  Error-vector Magnitude (Evm)  Inverter Chain  Leakage Current  Matching Network (Mn)  Polar  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Power Gating  
A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
U. R. Jagadheswaran, Harikrishnan Ramiah, Pui-In Mak, Rui P. Martins. A 2-μm InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(1), 200-209.
Authors:  U. R. Jagadheswaran;  Harikrishnan Ramiah;  Pui-In Mak;  Rui P. Martins
Favorite | TC[WOS]:26 TC[Scopus]:32 | Submit date：2019/02/11
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)  
A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power Journal article
Jagadheswaran,U. R., Ramiah,Harikrishnan, Mak,Pui In, Martins,Rui P.. A 2-μ InGaP/GaAs class-J power amplifier for multi-band LTE achieving 35.8-dB gain, 40.5% to 55.8% PAE and 28-dBm linear output power[J]. IEEE Transactions on Microwave Theory and Techniques, 2016, 64(1), 200-209.
Authors:  Jagadheswaran,U. R.;  Ramiah,Harikrishnan;  Mak,Pui In;  Martins,Rui P.
Favorite | TC[WOS]:26 TC[Scopus]:32  IF:4.1/4.2 | Submit date：2021/03/09
Adjacent Channel Leakage Ratio (Aclr)  Error Vector Magnitude (Evm)  Gallium-arsenide (Gaas)  Long-term Evolution (Lte)  Power Amplifier (Pa)  Power-added Efficiency (Pae)  Quadrature Amplitude Modulation (Qam)