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Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy Journal article
Sun, Dapeng, Zhang, Tan-Tan, Law, Man-Kay, Mak, Pui-In, Martins, Rui Paulo. Process compensated bipolar junction transistor-based CMOS temperature sensor with a +/- 1.5 degrees C (3 sigma) batch-to-batch inaccuracy[J]. ELECTRONICS LETTERS, 2018, 54(22), 1270-1271.
Authors:  Sun, Dapeng;  Zhang, Tan-Tan;  Law, Man-Kay;  Mak, Pui-In;  Martins, Rui Paulo
Favorite | TC[WOS]:1 TC[Scopus]:1  IF:0.7/0.9 | Submit date：2019/01/17
Resistors  Calibration  Cmos Integrated Circuits  Bipolar Transistors  Temperature Sensors  First-batch-only Calibration Parameters  Batch-to-batch Inaccuracy  Piecewise Bjt Process  Compensation Property  Base Recombination Current  Base-emitter Voltage  Cmos Temperature Sensor  Process Compensated Bjt  Intra-die Variation  Spread Compensation Property  On-chip Resistors  Inter-die Variation  Current 3  0 Mua  Voltage 1  2 v  Temperature-40 Degc To 125 Degc  Size 0  036 Mm  
Which is a better investment choice in the Hong Kong residential property market: a big or small property? Journal article
Zhuo Qiao, Wing Keung Wong. Which is a better investment choice in the Hong Kong residential property market: a big or small property?[J]. Applied Economics, 2015, 47(16), 1670-1685.
Authors:  Zhuo Qiao;  Wing Keung Wong
Favorite | TC[WOS]:17 TC[Scopus]:23 | Submit date：2019/08/01
Hong Kong Residential Property Market  Mean–variance Criterion  Property Size  Stochastic Dominance  
Ferroelectric properties of Ba0.6Sr0.4TiO3 thin films with different grain sizes Journal article
Fu C., Yang C., Chen H., Hu L., Wang Y.. Ferroelectric properties of Ba0.6Sr0.4TiO3 thin films with different grain sizes[J]. Materials Letters, 2005, 59(2-3), 330-333.
Authors:  Fu C.;  Yang C.;  Chen H.;  Hu L.;  Wang Y.
Favorite | TC[WOS]:42 TC[Scopus]:47 | Submit date：2019/01/16
Barium Strontium Titanate  Ferroelectric Property  Grain Size  Thin Film