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A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology Journal article
Tianxiang Wu, Jipeng Wei, Hongquan Liu, Shunli Ma, Yong Chen, Junyan Ren. A sub-6g sp32t single-chip switch with nanosecond switching speed for 5g applications in 0.25 µm gaas technology[J]. Electronics (Switzerland), 2021, 10(12).
Authors:  Tianxiang Wu;  Jipeng Wei;  Hongquan Liu;  Shunli Ma;  Yong Chen; et al.
Favorite | TC[WOS]:9 TC[Scopus]:9  IF:2.6/2.6 | Submit date:2021/10/28
Gaas Process  Pseudomorphic High-electron-mobility Transistor (Phemt)  Single-pole 32-throw (Sp32t) Switch  Sub-6g