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Postannealed Structural Relaxation and Phase Evolution of Quaternary Alloy BeMgZnO Journal article
Su, Longxing, Liu, Qiushi, Zhu, Yuan, Tang, Zikang. Postannealed Structural Relaxation and Phase Evolution of Quaternary Alloy BeMgZnO[J]. ACS Applied Electronic Materials, 2019, 1(10), 2061-2068.
Authors:  Su, Longxing;  Liu, Qiushi;  Zhu, Yuan;  Tang, Zikang
Favorite | TC[WOS]:4 TC[Scopus]:5  IF:4.3/4.4 | Submit date：2021/09/10
Bemgzno  Thermal Annealing  Structural Relaxation  Be Diffusion  Bandgap  Photodetector  
One-Step Inkjet Printed Perovskite in Air for Efficient Light Harvesting Journal article
Liang,Chao, Li,Pengwei, Gu,Hao, Zhang,Yiqiang, Li,Fengyu, Song,Yanlin, Shao,Guosheng, Mathews,Nripan, Xing,Guichuan. One-Step Inkjet Printed Perovskite in Air for Efficient Light Harvesting[J]. Solar RRL, 2018, 2(2).
Authors:  Liang,Chao;  Li,Pengwei;  Gu,Hao;  Zhang,Yiqiang;  Li,Fengyu; et al.
Favorite | TC[WOS]:118 TC[Scopus]:119  IF:6.0/6.4 | Submit date：2021/03/11
Droplet Manipulation  Large-area Perovskite Solar Cells  One-step Inkjet Printing  Vacuum-assisted Thermal Annealing  
Synthesis and thermal stability of nanocomposite nc-TiN/a-TiB2 thin films Journal article
Lu Y.H., Zhou Z.F., Sit P., Shen Y.G., Li K.Y., Chen H.. Synthesis and thermal stability of nanocomposite nc-TiN/a-TiB2 thin films[J]. Acta Metallurgica Sinica (English Letters), 2005, 18(3), 307-312.
Authors:  Lu Y.H.;  Zhou Z.F.;  Sit P.;  Shen Y.G.;  Li K.Y.; et al.
Favorite |  | Submit date：2019/04/08
Annealing  Boron  Nc-TiN/a-TiB2 thin film  Reactive unbalanced dc magnetron sputtering  Thermal stability  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift