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A 0.4-V 8400-μm2 Voltage Reference in 65-nm CMOS Exploiting Well-Proximity Effect
Journal article
Che, Chengyu, Lei, Ka Meng, Martins, Rui P., Mak, Pui In. A 0.4-V 8400-μm2 Voltage Reference in 65-nm CMOS Exploiting Well-Proximity Effect[J]. IEEE Transactions on Circuits and Systems II: Express Briefs, 2023, 70(10), 3822-3826.
Authors:
Che, Chengyu
;
Lei, Ka Meng
;
Martins, Rui P.
;
Mak, Pui In
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TC[WOS]:
2
TC[Scopus]:
4
IF:
4.0
/
3.7
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Submit date：2023/11/01
Analog Circuit
Deep-submicron Cmos
Layout-dependent Effect (Lde)
Ultra-low-voltage
Voltage Reference
Well-proximity Effect (Wpe)
