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Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance
An, Keyu1; Chen, Mingpeng1; He, Bingchen1; Ai, Haoqiang2; Wang, Wei1; Zhang, Zhihong1; Pan, Zhongbin1; Chen, Shi1; Ip, Weng Fai3; Lo, Kin Ho2; Chai, Jianwei4; Wang, Shijie4; Yang, Ming5; Wang, Shuangpeng1; Pan, Hui1,3
2022-08
Source PublicationAdvanced Materials Technologies
ISSN2365-709X
Volume7Issue:8Pages:2200217
Abstract

The surface-enhanced Raman scattering (SERS) as a novel and efficient analytic technique to probe molecules has attracted tremendous attention. Semiconducting substrates have been widely investigated for their applications into SERS because of their easy integration with electronic devices. In this work, a wafer-scale semiconducting MoS monolayer (2H-MoS-ML) without additional treatment is used as the SERS substrate, which shows the naturally formed MoS ML has excellent chemical stability, high uniformity, and high sensitivity. It is found that the detection concentration limit can reach 1 × 10 m and the enhancement factor is about 4.5 × 10 for the rhodamine 6G (R6G) under a 532 nm excitation laser, which is the highest SERS performance observed on 2H-MoS-ML up to now. The experimental and computational studies reveal that the photo-enhanced charge transfer coupled with molecule resonance contribute to remarkable SERS. In addition to R6G, 2H-MoS-ML shows good SERS signals on the detection of amaranth and crystal violet too. The findings not only provide an insightful understanding of the mechanism for the improved SERS performance of semiconducting transition-metal dichalcogenides (TMDs) MLs, but are helpful for the design of novel SERS substrates. It is expected that the wafer-scale TMDs may find practical applications in SERS.

KeywordCharge Transfer Molecule Resonance Mos2 Monolayer Sers Wafer Scale
DOI10.1002/admt.202200217
URLView the original
Indexed BySCIE
Language英語English
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:000779890100001
PublisherWILEY, 111 RIVER ST, HOBOKEN, NJ 07030
Scopus ID2-s2.0-85127651748
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Citation statistics
Document TypeJournal article
CollectionINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Faculty of Science and Technology
DEPARTMENT OF ELECTROMECHANICAL ENGINEERING
Corresponding AuthorYang, Ming; Wang, Shuangpeng; Pan, Hui
Affiliation1.Institute of Applied Physics and Materials Engineering, University of Macau, 999078, Macao
2.Department of Electromechanical Engineering, Faculty of Science and Technology, University of Macau, 999078, Macao
3.Department of Physics and Chemistry, Faculty of Science and Technology, University of Macau, 999078, Macao
4.Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), Innovis, 2 Fusionopolis Way, 138634, Singapore
5.Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hung Hom, Hong Kong
First Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING
Corresponding Author AffilicationINSTITUTE OF APPLIED PHYSICS AND MATERIALS ENGINEERING;  Faculty of Science and Technology
Recommended Citation
GB/T 7714
An, Keyu,Chen, Mingpeng,He, Bingchen,et al. Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance[J]. Advanced Materials Technologies, 2022, 7(8), 2200217.
APA An, Keyu., Chen, Mingpeng., He, Bingchen., Ai, Haoqiang., Wang, Wei., Zhang, Zhihong., Pan, Zhongbin., Chen, Shi., Ip, Weng Fai., Lo, Kin Ho., Chai, Jianwei., Wang, Shijie., Yang, Ming., Wang, Shuangpeng., & Pan, Hui (2022). Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance. Advanced Materials Technologies, 7(8), 2200217.
MLA An, Keyu,et al."Wafer-Scale 2H-MoS2 Monolayer for High Surface-enhanced Raman Scattering Performance: Charge-Transfer Coupled with Molecule Resonance".Advanced Materials Technologies 7.8(2022):2200217.
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