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中文Chinese [1]
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采用复合模式生长半导体薄膜的方法及装置
Patent
专利号: CN102312217B, 申请日期: 2011-09-06, 公开日期: 2013-04-17
Authors:
单崇新
;
鞠振刚
;
倪佩楠
;
李炳辉
;
王双鹏
; et al.
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Submit date：2022/05/21
