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An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction Journal article
Kong, Moufu, Huang, Ke, Guo, Jiaxin, Zhang, Bingke, Wu, Huanjie, Liu, Cong, Wang, Bin. An Ultralow On-Specific Resistance Trench MOSFET with Multiple Stepped Accumulation Layer for Conduction[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68(8), 4022-4027.
Authors:  Kong, Moufu;  Huang, Ke;  Guo, Jiaxin;  Zhang, Bingke;  Wu, Huanjie; et al.
Favorite | TC[WOS]:5 TC[Scopus]:5  IF:2.9/2.9 | Submit date:2021/12/08
Accumulation Layer  Reverse Recovery  Schottky Barrier Diode  Split-gate (Sg)  Trench Mosfet