English | 繁體

Search in the results

UM

Browse/Search Results:  1-10 of 16 Help

Selected(0)Clear Items/Page:    Sort:
Whole-genome cartography of estrogen receptor α binding sites Journal article
Lin C.-Y., Vega V.B., Thomsen J.S., Zhang T., Say L.K., Xie M., Kuo P.C., Lipovich L., Barnett D.H., Stossi F., Yeo A., George J., Kuznetsov V.A., Yew K.L., Tze H.C., Palanisamy N., Miller L.D., Cheung E., Katzenellenbogen B.S., Ruan Y., Bourque G., Wei C.-L., Liu E.T.. Whole-genome cartography of estrogen receptor α binding sites[J]. PLoS Genetics, 2007, 3(6), 0867-0885.
Authors:  Lin C.-Y.;  Vega V.B.;  Thomsen J.S.;  Zhang T.;  Say L.K.; et al.
Favorite | TC[WOS]:366 TC[Scopus]:384 | Submit date：2018/12/17
Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition Journal article
Lin C.H., Yen B.M., Kuo H.C., Chen H., Wu T.B., Stillman G.E.. Domain structure and electrical properties of highly textured PbZr x Ti 1-x O 3 thin films grown on LaNiO 3 -electrode-buffered Si by metalorganic chemical vapor deposition[J]. Journal of Materials Research, 2000, 15(1), 115-124.
Authors:  Lin C.H.;  Yen B.M.;  Kuo H.C.;  Chen H.;  Wu T.B.; et al.
Favorite | TC[WOS]:10 TC[Scopus]:9 | Submit date：2019/04/08
Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer Conference paper
Kuo H.C., Lin C.H., Moser B.C., Hsia H., Tang Z., Chen H., Feng M., Stillman G.E.. Thermal reliability of Pt/Ti/Pt/Au Schottky contact on InP with a GalnP Schottky barrier enhancement layer[C], 1999, 231-236.
Authors:  Kuo H.C.;  Lin C.H.;  Moser B.C.;  Hsia H.;  Tang Z.; et al.
Favorite |  | Submit date：2019/04/08
Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD Journal article
Lin C.H., Kuo H.C., Stillman G.E., Chen H.. Characterization of Pb(ScTa)1-xTixO3 (x<0.3) thin films grown on LaNiO3 coated Si By MOCVD[J]. Materials Research Society Symposium - Proceedings, 1999, 541, 679-684.
Authors:  Lin C.H.;  Kuo H.C.;  Stillman G.E.;  Chen H.
Favorite |  | Submit date：2019/04/08
Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy Journal article
Kuo H.C., Thomas S., Norton T.U., Moser B.G., Stillman G.E., Lin C.H., Chen H.. Structural and optical properties of 1.3 μm wavelength InAsP/InP/InGaP strain-compensated multiple quantum well modulators grown by gas-source molecular beam epitaxy[J]. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 1998, 16(3), 1377-1380.
Authors:  Kuo H.C.;  Thomas S.;  Norton T.U.;  Moser B.G.;  Stillman G.E.; et al.
Favorite |  | Submit date：2019/04/08
Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD Conference paper
Lin C.H., Yen B.M., Chen H., Wu T.B., Kuo H.C., Stillman G.E.. Characterization of highly textured PZT thin films grown on LaNiO 3 coated Si substrates by MOCVD[C], 1998, 189-194.
Authors:  Lin C.H.;  Yen B.M.;  Chen H.;  Wu T.B.;  Kuo H.C.; et al.
Favorite |  | Submit date：2019/04/08
Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy Conference paper
Kuo H.C., Thomas S., Curtis A.P., Stillman G.E., Lin C.H., Chen H.. Growth and characterization of InAs x P 1-x /InP strained multiple quantum wells by gas source molecular beam epitaxy[C], 1997, 153-158.
Authors:  Kuo H.C.;  Thomas S.;  Curtis A.P.;  Stillman G.E.;  Lin C.H.; et al.
Favorite |  | Submit date：2019/04/08
Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors Journal article
Sengupta D.K., Fang W., Malin J.I., Curtis A.P., Horton T., Kuo H.C., Turnbull D., Lin C.H., Li J., Hsieh K.C., Chuang S.L., Adesida I., Feng M., Bishop S.G., Stillman G.E., Gibson J.M., Chen H., Mazumder J., Liu H.C.. Effects of rapid thermal annealing on the device characteristics of quantum well infrared photodetectors[J]. Journal of Electronic Materials, 1997, 26(1), 43-51.
Authors:  Sengupta D.K.;  Fang W.;  Malin J.I.;  Curtis A.P.;  Horton T.; et al.
Favorite | TC[WOS]:2 TC[Scopus]:3 | Submit date：2019/04/08
Dark Current Characteristics  Multiple Quantum Well Infrared Photodectors (Qwips)  Quantum Efficiency  Rapid Thermal Annealing (Rta)  Red Shift  
Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD Conference paper
Yang Q., Hartmann Q.J., Curtis A.P., Lin C., Ahmari D.A., Scott D., Kuo H.C., Chen H., Stillman G.E.. Optimization of group v switching times for InGaP/GaAs heterostructures grown by LP-MOCVD[C], 1997, 95-98.
Authors:  Yang Q.;  Hartmann Q.J.;  Curtis A.P.;  Lin C.;  Ahmari D.A.; et al.
Favorite | TC[WOS]:0 TC[Scopus]:1 | Submit date：2019/04/08
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm Journal article
Sengupta D.K., Jackson S.L., Curtis A.P., Fang W., Malin J.I., Horton T.U., Hartman Q., Kuo H.C., Thomas S., Miller J., Hsieh K.C., Adesida I., Chuang S.L., Feng M., Stillman G.E., Chang Y.C., Wu W., Tucker J., Chen H., Gibson J.M., Mazumder J., Li L., Liu H.C.. Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 μm[J]. Journal of Electronic Materials, 1997, 26(12), 1376-1381.
Authors:  Sengupta D.K.;  Jackson S.L.;  Curtis A.P.;  Fang W.;  Malin J.I.; et al.
Favorite | TC[WOS]:7 TC[Scopus]:7 | Submit date：2019/04/08
Gas Source Molecular Beam Epitaxy (Gsmbe)  Inp/ingaas  Quantum-well Infrared Photodectors (Qwips)